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(364)
Yee-Chia Yeo
139
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Academic
Authors
Ganesh Shankar Samudra
Ganesh Shankar Samudra,National University of Singapore,Electrical & Electronic Engineering,Hardware & Architecture,Industrial Engineering
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Ganesh Shankar Samudra
National University of Singapore
Publications:
265
|
Citations:
905
Fields:
Electrical & Electronic Engineering
,
Hardware & Architecture
,
Industrial Engineering
View FAQ about top research areas and Fields of study
Collaborated with
364 co-authors
from 1992 to 2012
|
Cited by
1740 authors
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Annual
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Publications
(265)
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Graphene Nanoribbon Tunneling Field-Effect Transistors With a Semiconducting and a Semimetallic Heterojunction Channel
Haixia Da
,
Kai-Tak Lam
,
G. Samudra
,
Sai-Kong Chin
,
Gengchiau Liang
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 59, no. 5, pp. 1454-1461, 2012
Contact Technology for Strained nFinFETs With Silicon–Carbon Source/Drain Stressors Featuring Sulfur Implant and Segregation
Shao-Ming Koh
,
Ganesh S. Samudra
,
Yee-Chia Yeo
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 59, no. 4, pp. 1046-1055, 2012
A new robust non-local algorithm for band-to-band tunneling simulation and its application to Tunnel-FET
(
Citations: 1
)
Chen Shen
,
Li-Tao Yang
,
Ganesh Samudra
,
Yee-Chia Yeo
Journal:
Solid-state Electronics - SOLID STATE ELECTRON
, vol. 57, no. 1, pp. 23-30, 2011
Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs
(
Citations: 1
)
Shao-Ming Koh
,
Yinjie Ding
,
Cheng Guo
,
Kam-Chew Leong
,
Ganesh S. Samudra
,
Yee-Chia Yeo
Published in 2011.
Mechanism of Stress Memorization Technique (SMT) and Method to Maximize Its Effect
S. M. Pandey
,
J. Liu
,
Z. S. Hooi
,
S. Flachowsky
,
T. Herrmann
,
W. Tao
,
F. Benistant
,
A. See
,
S. Chu
,
G. S. Samudra
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 4, pp. 467-469, 2011
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Citations
(905 times by 621 publications)
A critical re-evaluation of the usefulness of RD framework in predicting NBTI stress and recovery
(
Citations: 2
)
S. Mahapatra
,
A. E. Islam
,
S. Deora
,
V. D. Maheta
,
K. Joshi
,
A. Jain
,
M. A. Alam
Published in 2011.
Microstructural, chemical bonding, stress development and charge storage characteristics of Ge nanocrystals embedded in hafnium oxide
(
Citations: 1
)
S. Das
,
R. K. Singha
,
S. Manna
,
S. Gangopadhyay
,
A. Dhar
,
S. K. Ray
Journal:
Journal of Nanoparticle Research - J NANOPART RES
, vol. 13, no. 2, pp. 587-595, 2011
A microscopically accurate model of partially ballistic nanoMOSFETs in saturation based on channel backscattering
(
Citations: 1
)
Gino Giusi
,
Giuseppe Iannaccone
,
Felice Crupi
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 3, pp. 691-697, 2011
Reassessing the Mechanisms of Negative-Bias Temperature Instability by Repetitive Stress/Relaxation Experiments
(
Citations: 2
)
D. S. Ang
,
Z. Q. Teo
,
C. M. Ng
Journal:
IEEE Transactions on Device and Materials Reliability - IEEE TRANS DEVICE MATER RELIA
, vol. 11, no. 1, pp. 19-34, 2011
Microcircuit Modeling and Simulation Beyond Ohm's Law
(
Citations: 1
)
Tanuj Saxena
,
Desmond Chang Yih Chek
,
Michael Loong Peng Tan
,
Vijay K. Arora
Journal:
IEEE Transactions on Education - IEEE TRANS EDUC
, vol. 54, no. 1, pp. 34-40, 2011
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