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Co-authors
(65)
Tibor Grasser
14
Rainer Minixhofer
13
Jong Mun Park
9
Hajdin Ceric
8
Ehrenfried Seebacher
7
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Academic
Authors
Hubert Enichlmair
Hubert Enichlmair,Vienna University of Technology,Algorithms & Theory,Electrical & Electronic Engineering,Software Engineering
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Hubert Enichlmair
Vienna University of Technology
Publications:
29
|
Citations:
34
Fields:
Algorithms & Theory
,
Electrical & Electronic Engineering
,
Software Engineering
View FAQ about top research areas and Fields of study
Collaborated with
65 co-authors
from 1994 to 2012
|
Cited by
101 authors
Cumulative
Annual
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Publications
(29)
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Hot-carrier behaviour and ron-BV trade-off optimization for p-channel LDMOS transistors in a 180 nm HV-CMOS technology
Jong Mun Park
,
Martin Knaipp
,
Hubert Enichlmair
,
Rainer Minixhofer
,
Yun Shi
,
Natalie Feilchenfeld
Conference:
International Symposium on Power Semiconductor Devices and Ics - ISPSD
, pp. 189-192, 2012
Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET
(
Citations: 2
)
Stanislav Tyaginov
,
Ivan Starkov
,
Oliver Triebl
,
Hajdin Ceric
,
Tibor Grasser
,
Hubert Enichlmair
,
Jong-Mun Park
,
Christoph Jungemann
Conference:
International Conference on Simulation of Semiconductor Processes and Devices - SISPAD
, pp. 123-126, 2011
Hot-carrier degradation caused interface state profile---Simulation versus experiment
I. Starkov
,
S. Tyaginov
,
H. Enichlmair
,
J. Cervenka
,
C. Jungemann
,
S. Carniello
,
J. M. Park
,
H. Ceric
,
T. Grasser
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
, vol. 29, 2011
An analytical approach for physical modeling of hot-carrier induced degradation
S. Tyaginov
,
I. Starkov
,
H. Enichlmair
,
Ch. Jungemann
,
J. M. Park
,
E. Seebacher
,
R. Orio
,
H. Ceric
,
T. Grasser
Journal:
Microelectronics Reliability
, vol. 51, no. 9, pp. 1525-1529, 2011
An analytical model for MOSFET local oxide capacitance
I. Starkov
,
A. Starkov
,
S. Tyaginov
,
H. Enichlmair
,
H. Ceric
,
T. Grasser
Conference:
Semiconductor Device Research International Symposium - ISDRS
, 2011
Sort by:
Citations
(34 times by 28 publications)
Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET
(
Citations: 2
)
Stanislav Tyaginov
,
Ivan Starkov
,
Oliver Triebl
,
Hajdin Ceric
,
Tibor Grasser
,
Hubert Enichlmair
,
Jong-Mun Park
,
Christoph Jungemann
Conference:
International Conference on Simulation of Semiconductor Processes and Devices - SISPAD
, pp. 123-126, 2011
A critical re-evaluation of the usefulness of RD framework in predicting NBTI stress and recovery
(
Citations: 2
)
S. Mahapatra
,
A. E. Islam
,
S. Deora
,
V. D. Maheta
,
K. Joshi
,
A. Jain
,
M. A. Alam
Published in 2011.
Process variation aware ESD design window considerations on a 0.18μm analog, mixed-signal high voltage technology
(
Citations: 1
)
Frederic Roger
,
Wolfgang Reinprecht
,
Rainer Minixhofer
Published in 2011.
The ‘permanent’ component of NBTI: Composition and annealing
(
Citations: 1
)
T. Grasser
,
Th. Aichinger
,
G. Pobegen
,
H. Reisinger
,
P.-J. Wagner
,
J. Franco
,
M. Nelhiebel
,
B. Kaczer
Published in 2011.
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps
Tibor Grasser
,
Ben Kaczer
,
Wolfgang Goes
,
Hans Reisinger
,
Thomas Aichinger
,
Philipp Hehenberger
,
Paul-Jürgen Wagner
,
Franz Schanovsky
,
Jacopo Franco
,
María Toledano Luque
,
Michael Nelhiebel
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 11, pp. 3652-3666, 2011
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