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Co-authors
(49)
Agostino Pirovano
8
Roberto Bez
7
Fabio Pellizzer
6
M. Tosi
5
Ferdinando Bedeschi
4
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Authors
Francois-gal Ottogalli
Francois-gal Ottogalli (François-gal Ottogalli),Politecnico di Milano,Algorithms & Theory,Scientific Computing,Electrical & Electronic Engineering
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Francois-gal Ottogalli (François-gal Ottogalli)
Politecnico di Milano
Publications:
9
|
Citations:
160
Fields:
Algorithms & Theory
,
Scientific Computing
,
Electrical & Electronic Engineering
View FAQ about top research areas and Fields of study
Collaborated with
49 co-authors
from 2001 to 2010
|
Cited by
378 authors
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Annual
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Publications
(9)
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Impact of the current density increase on reliability in scaled BJT-selected PCM for high-density applications
(
Citations: 3
)
A. Redaelli
,
A. Pirovano
,
I. Tortorelli
,
F. Ottogalli
,
A. Ghetti
,
L. Laurin
,
A. Benvenuti
Published in 2010.
Data Retention Characterization of PhaseChange Memory Arrays
(
Citations: 11
)
B. Gleixner
,
A. Pirovano
,
J. Sarkar
,
F. Ottogalli
,
E. Tortorelli
,
M. Tosi
,
R. Bez
Conference:
Reliability Physics, Annual International Symposium - IRPS
, 2007
4Mb MOSFET-selected /spl mu/trench phase-change memory experimental chip
(
Citations: 19
)
F. Bedeschi
,
R. Bez
,
C. Boffino
,
E. Bonizzoni
,
E. C. Buda
,
G. Casagrande
,
L. Costa
,
M. Ferraro
,
R. Gastaldi
,
O. Khouri
,
F. Ottogalli
,
F. Pellizzer
http://academic.research.microsoft.com/io.ashx?type=5&id=1527037&selfId1=1218288&selfId2=0&maxNumber=12&query=
Journal:
IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS
, vol. 40, no. 7, pp. 1557-1565, 2005
μtrench phase-change memory cell engineering and optimization
(
Citations: 6
)
A. Pirovano
,
F. Pellizzer
,
A. Redaelli
,
I. Tortorelli
,
E. Varesi
,
F. Ottogalli
,
M. Tosi
,
P. Besana
,
R. Cecchini
,
R. Piva
,
M. Magistretti
,
M. Scaravaggi
http://academic.research.microsoft.com/io.ashx?type=5&id=50428894&selfId1=1218288&selfId2=0&maxNumber=12&query=
Conference:
Solid-State Device Research European Conference - ESSDERC
, 2005
Novel μtrench phase-change memory cell for embedded and stand-alone non-volatile memory applications
(
Citations: 69
)
F. Pellizzer
,
A. Pirovano
,
F. Ottogalli
,
M. Magistretti
,
M. Scaravaggi
,
P. Zuliani
,
M. Tosi
,
A. Benvenuti
,
P. Besana
,
S. Cadeo
,
T. Marangon
,
R. Morandi
http://academic.research.microsoft.com/io.ashx?type=5&id=50374052&selfId1=1218288&selfId2=0&maxNumber=12&query=
Conference:
VLSI Technology, Symposium - VLSIT
, 2004
Sort by:
Citations
(160 times by 126 publications)
Mnemosyne: lightweight persistent memory
(
Citations: 3
)
Haris Volos
,
Andres Jaan Tack
,
Michael M. Swift
Conference:
Architectural Support for Programming Languages and Operating Systems - ASPLOS
, pp. 91-104, 2011
Three-dimensional numerical simulation of electrostatic discharge sensitivity for phase-change memories
Sanchai Harnsoongnoen
,
Santipab Sainon
,
Sarunya Puapairoj
,
Chiranut Sa-ngiamsak
Conference:
International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology - ECTI-CON
, 2011
Thermal Stress Analysis of $\hbox{Ge}_{1}\hbox{Sb}_{4} \hbox{Te}_{7}$Based PhaseChange Memory Devices
Sangwoo Shin
,
Kyung Min Kim
,
Jiwoon Song
,
Hyung Keun Kim
,
Doo Jin Choi
,
Hyung Hee Cho
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 3, pp. 782-791, 2011
Driving Device Comparison for PhaseChange Memory
Lin Li
,
Kailiang Lu
,
Bipin Rajendran
,
Thomas D. Happ
,
Hsiang-Lan Lung
,
Chung Lam
,
Mansun Chan
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 3, pp. 664-671, 2011
Reset current reduction in phase-change memory cell using a thin interfacial oxide layer
Q. Hubert
,
C. Jahan
,
A. Toffoli
,
L. Perniola
,
V. Sousa
,
A. Persico
,
J. F. Nodin
,
H. Grampeix
,
F. Aussenac
,
B. de Salvo
Conference:
Solid-State Device Research European Conference - ESSDERC
, pp. 95-98, 2011
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