Dirk J. Wouters

Co-authors (344)

Conferences (11)

IMW

5
IEDM

4
IITC

2
ISAF

2
ESSDERC

2

Journals (31)

Keywords (167)

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Dirk J. Wouters

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Dirk J. Wouters

Catholic University of Leuven

Publications: 104 | Citations: 191 | G-Index: 8 | H-Index: 6

Interests: Electrical & Electronic Engineering, Manufacturing Technology, Nanotechnology

Collaborated with 344 co-authors from 1987 to 2011; Cited by 701 authors

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Publications (104)

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Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories (Citations: 5)

F. Nardi, D. Ielmini, C. Cagli, S. Spiga, M. Fanciulli, L. Goux, D. J. Wouters

Journal: Solid-state Electronics - SOLID STATE ELECTRON , vol. 58, no. 1, pp. 42-47, 2011
Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode

Y. Y. Chen, L. Goux, L. Pantisano, J. Swerts, C. Adelmann, S. Mertens, V. V. Afanasiev, X. P. Wang, B. Govoreanu, R. Degraeve, S. Kubicek, V. ParaschivD. J. Woutershttp://academic.research.microsoft.com/io.ashx?type=5&id=51067790&selfId1=12606686&selfId2=0&maxNumber=12&query=

Conference: Interconnect Technology, IEEE International Conference - IITC , pp. 1-3, 2011
A fast and reliable method used to investigate the size-dependent retention lifetime of a phase-change line cell

L. Goux, G. A. M. Hurkx, X. P. Wang, R. Delhougne, K. Attenborough, D. Gravesteijn, D. Wouters, J. Perez Gonzalez

Journal: Solid-state Electronics - SOLID STATE ELECTRON , vol. 58, no. 1, pp. 17-22, 2011
Evidences of anodic-oxidation reset mechanism in TiN\NiO\Ni RRAM cells

L. Goux, R. Degraeve, B. Govoreanu, H.-Y. Chou, V. V. Afanas'ev, J. Meersschaut, M. Toeller, X. P. Wang, S. Kubicek, O. Richard, J. A. Kittl, D. J. Woutershttp://academic.research.microsoft.com/io.ashx?type=5&id=51101677&selfId1=12606686&selfId2=0&maxNumber=12&query=

Published in 2011.
The lectin pathway is inhibited by an anti-coagulant protease inhibitor acting on MASP-2

D. Wouters, M. Keizer, M. Hart, R. Pouw, A. Wolbink, T. Kuijpers, D. Hamann, L. Aarden

Journal: Molecular Immunology - MOL IMMUNOL , vol. 48, no. 14, pp. 1687-1687, 2011

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Citations (191 times by 151 publications)

A Memristor SPICE Implementation and a New Approach for Magnetic Flux-Controlled Memristor Modeling (Citations: 7)

Daniel Batas, Horst Fiedler

Journal: IEEE Transactions on Nanotechnology - IEEE TRANS NANOTECHNOL , vol. 10, no. 2, pp. 250-255, 2011
Electrical Characteristics of Germanium $\hbox{n}^{+}/ \hbox{p}$ Junctions Obtained Using Rapid Thermal Annealing of Coimplanted P and Sb (Citations: 2)

G. Thareja, S.-L. Cheng, T. Kamins, K. Saraswat, Y. Nishi

Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 5, pp. 608-610, 2011
Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM (Citations: 1)

Daniele Ielmini, Federico Nardi, Carlo Cagli

Published in 2011.
The Effect of Tunnel Barrier at Resistive Switching Device for Low Power Memory Applications

Hyejung Choi, Jaeyun Yi, Sangmin Hwang, Sangkeum Lee, Seokpyo Song, Seunghwan Lee, Jaeyeon Lee, Donghee Son, Suk-Ju Kim, Ja-Yong Kim, Sunghoon Lee, Jiwon Moonhttp://academic.research.microsoft.com/io.ashx?type=5&id=51056385&selfId1=12606686&selfId2=0&maxNumber=12&query=

Conference: IEEE International Memory Workshop, IMW - IMW , 2011
Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline $\hbox{Al}_{2}\hbox{O}_{3}\hbox{Based}$ Devices Studied With AFM-Related Techniques

Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, Günther Benstetter, Edgar Lodermeier, Heiko Ranzinger, Gert Jaschke, Steffen Teichert, Lutz Wilde, Pawel Piotr Michalowski

Journal: IEEE Transactions on Nanotechnology - IEEE TRANS NANOTECHNOL , vol. 10, no. 2, pp. 344-351, 2011

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Publications (104) BibTeX | RIS | RefWorks Download

Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories (Citations: 5)

A Memristor SPICE Implementation and a New Approach for Magnetic Flux-Controlled Memristor Modeling (Citations: 7)

Electrical Characteristics of Germanium $\hbox{n}^{+}/ \hbox{p}$ Junctions Obtained Using Rapid Thermal Annealing of Coimplanted P and Sb (Citations: 2)

Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM (Citations: 1)

Publications (104)

BibTeX | RIS | RefWorks Download