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Co-authors
(173)
Iain G. Thayne
35
Colin R. Stanley
29
Stephen Thoms
18
Steven P. Beaumont
17
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17
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(16)
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Academic
Authors
Martin C. Holland
Martin C. Holland,University of Glasgow,Electrical & Electronic Engineering,Neuroscience,Nanotechnology
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Martin C. Holland
University of Glasgow
Publications:
89
|
Citations:
163
Fields:
Electrical & Electronic Engineering
,
Neuroscience
,
Nanotechnology
View FAQ about top research areas and Fields of study
Collaborated with
173 co-authors
from 1990 to 2011
|
Cited by
596 authors
Cumulative
Annual
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Publications
(89)
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Electron Mobility in Surface and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric
Steven J. Bentley
,
Martin Holland
,
Xu Li
,
Gary W. Paterson
,
Haiping Zhou
,
Olesya Ignatova
,
Douglas Macintyre
,
Stephen Thoms
,
Asen Asenov
,
Byungha Shin
,
Jaesoo Ahn
,
Paul C. McIntyre
http://academic.research.microsoft.com/io.ashx?type=5&id=51178659&selfId1=12623387&selfId2=0&maxNumber=12&query=
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 4, pp. 494-496, 2011
Electron Mobility in Surface and Buried-Channel Flatband {In}_{0.53}{Ga}_{0.47}{As} MOSFETs With ALD {Al}_{2}{O}_{3} Gate Dielectric
Steven J. Bentley
,
Martin Holland
,
Xu Li
,
Gary W. Paterson
,
Haiping Zhou
,
Olesya Ignatova
,
Douglas MacIntyre
,
Stephen Thoms
,
Asen Asenov
,
Byungha Shin
,
Jaesoo Ahn
,
Paul C. McIntyre
http://academic.research.microsoft.com/io.ashx?type=5&id=55901472&selfId1=12623387&selfId2=0&maxNumber=12&query=
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, pp. 494-496, 2011
III–V nMOSFETs – Some issues associated with roadmap worthiness (invited)
Iain Thayne
,
Steven Bentley
,
Martin Holland
,
Wout Jansen
,
Xu Li
,
Douglas Macintyre
,
Stephen Thoms
,
Byungha Shin
,
Jaesoo Ahn
,
Paul McIntyre
Journal:
Microelectronic Engineering - MICROELECTRON ENG
, vol. 88, no. 7, pp. 1070-1075, 2011
Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors
X. Li
,
S. Bentley
,
H. McLelland
,
M. C. Holland
,
H. Zhou
,
S. Thoms
,
D. S. MacIntyre
,
I. G. Thayne
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
, vol. 28, 2010
An In0.23Ga0.77As-based pHEMT-like planar Gunn diode operating at 116 GHz
C. Li
,
A. Khalid
,
L. B. Lok
,
N. J. Pilgrim
,
M. C. Holland
,
G. M. Dunn
,
D. R. S. Cumming
Conference:
International Conference on Infrared and Millimeter Waves - IRMMW-THz
, 2010
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Citations
(163 times by 146 publications)
Early CT signs of progressive hemorrhagic injury following acute traumatic brain injury
Wu-song Tong
,
Ping Zheng
,
Jun-fa Xu
,
Yi-jun Guo
,
Jing-song Zeng
,
Wen-jin Yang
,
Gao-yi Li
,
Bin He
,
Hui Yu
Journal:
Neuroradiology
, vol. 53, no. 5, pp. 305-309, 2011
The lung and the brain: a dangerous cross-talk
Paolo Pelosi
,
Patricia RM Rocco
Journal:
Critical Care - CRIT CARE
, vol. 15, no. 3, pp. 1-3, 2011
CT Angiography "Spot Sign" Predicts Hematoma Expansion in Acute Intracerebral Hemorrhage
(
Citations: 22
)
Ryan Wada
,
Richard I. Aviv
,
Allan J. Fox
,
Demetrios J. Sahlas
,
David J. Gladstone
,
George Tomlinson
,
Sean P. Symons
Published in 2010.
Postcontrast CT Extravasation Is Associated With Hematoma Expansion in CTA Spot Negative Patients
(
Citations: 4
)
Ashraf Ederies
,
Andrew Demchuk
,
Tze Chia
,
David J. Gladstone
,
Dar Dowlatshahi
,
Gabriel BenDavit
,
Kelly Wong
,
Sean P. Symons
,
Richard I. Aviv
Published in 2010.
Clinical trials in traumatic brain injury: Past experience and current developments
(
Citations: 6
)
Andrew I. R. Maas
,
Bob Roozenbeek
,
Geoffrey T. Manley
Journal:
Neurotherapeutics
, vol. 7, no. 1, pp. 115-126, 2010
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