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Co-authors
(74)
Susanna Reggiani
100
Giorgio Baccarani
96
Antonio Gnudi
63
Massimo Rudan
45
Stefano Poli
14
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(13)
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Authors
Elena Gnani
Elena Gnani,Università di Bologna,Electrical & Electronic Engineering,Nanotechnology,Condensed Matter Physics
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Elena Gnani
Università di Bologna
Publications:
105
|
Citations:
264
Fields:
Electrical & Electronic Engineering
,
Nanotechnology
,
Condensed Matter Physics
View FAQ about top research areas and Fields of study
Collaborated with
74 co-authors
from 2000 to 2012
|
Cited by
540 authors
Cumulative
Annual
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Publications
(105)
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Optimization and Analysis of the Dual n/p-LDMOS Device
Stefano Poli
,
Susanna Reggiani
,
Rupendra Kumar Sharma
,
Marie Denison
,
Elena Gnani
,
Antonio Gnudi
,
Giorgio Baccarani
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 59, no. 3, pp. 745-753, 2012
Physical Model of the Junctionless UTB SOI-FET
Elena Gnani
,
Antonio Gnudi
,
Susanna Reggiani
,
Giorgio Baccarani
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 59, no. 4, pp. 941-948, 2012
Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs
A. Gnudi
,
S. Reggiani
,
E. Gnani
,
G. Baccarani
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 33, no. 3, pp. 336-338, 2012
Mode Space Approach for Tight Binding Transport Simulation in Graphene Nanoribbon FETs
(
Citations: 2
)
Roberto Grassi
,
Antonio Gnudi
,
Elena Gnani
,
Susanna Reggiani
,
Giorgio Baccarani
Journal:
IEEE Transactions on Nanotechnology - IEEE TRANS NANOTECHNOL
, vol. 10, no. 3, pp. 371-378, 2011
Full understanding of hot-carrier-induced degradation in STI-based LDMOS transistors in the impact-ionization operating regime
(
Citations: 1
)
S. Poli
,
S. Reggiani
,
G. Baccarani
,
E. Gnani
,
A. Gnudi
,
M. Denison
,
S. Pendharkar
,
R. Wise
Conference:
International Symposium on Power Semiconductor Devices and Ics - ISPSD
, pp. 152-155, 2011
Sort by:
Citations
(264 times by 195 publications)
Analytical VTH and S models for (DMG–GC–stack) surrounding-gate MOSFET
Abdellah Aouaj
,
Ahmed Bouziane
,
Ahmed Nouaçry
Journal:
International Journal of Electronics - INT J ELECTRON
, vol. 99, no. 1, pp. 141-148, 2012
Mode Space Approach for Tight Binding Transport Simulation in Graphene Nanoribbon FETs
(
Citations: 2
)
Roberto Grassi
,
Antonio Gnudi
,
Elena Gnani
,
Susanna Reggiani
,
Giorgio Baccarani
Journal:
IEEE Transactions on Nanotechnology - IEEE TRANS NANOTECHNOL
, vol. 10, no. 3, pp. 371-378, 2011
Quantum Confinement Effects in Capacitance Behavior of Multigate Silicon Nanowire MOSFETs
(
Citations: 2
)
Aryan Afzalian
,
Chi-Woo Lee
,
Nima Dehdashti Akhavan
,
Ran Yan
,
Isabelle Ferain
,
Jean-Pierre Colinge
Journal:
IEEE Transactions on Nanotechnology - IEEE TRANS NANOTECHNOL
, vol. 10, no. 2, pp. 300-309, 2011
Cyclic vectors and cellular indecomposable operators on Q p spaces
(
Citations: 1
)
Ye Shanli
,
Lou Zengjian
Journal:
Acta Mathematica Scientia - ACTA MATH SCI
, vol. 31, no. 2, pp. 434-440, 2011
Full understanding of hot-carrier-induced degradation in STI-based LDMOS transistors in the impact-ionization operating regime
(
Citations: 1
)
S. Poli
,
S. Reggiani
,
G. Baccarani
,
E. Gnani
,
A. Gnudi
,
M. Denison
,
S. Pendharkar
,
R. Wise
Conference:
International Symposium on Power Semiconductor Devices and Ics - ISPSD
, pp. 152-155, 2011
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