Sign in
Author
|
Conference
|
Journal
|
Organization
|
Year
|
DOI
Look for results that meet for the following criteria:
since
equal to
before
between
and
Search in all fields of study
Limit my searches in the following fields of study
Agriculture Science
Arts & Humanities
Biology
Chemistry
Computer Science
Economics & Business
Engineering
Environmental Sciences
Geosciences
Material Science
Mathematics
Medicine
Physics
Social Science
Multidisciplinary
Co-authors
(16)
Jorg Schulze (Jörg Schulze)
3
Ignaz Eisele
3
C. Tolksdorf
3
A. K. Ludsteck
2
Gerald Deboy
1
Conferences
(2)
DRC
1
ISPSD
1
Journals
(2)
IEEE TRANS ELECTRON DEVICES
1
Thin Solid Films
1
Keywords
(9)
Embed
Subscribe
Academic
Authors
S. Sedlmaier
S. Sedlmaier,University of the Bundeswehr Munich,Electrical & Electronic Engineering,Mechanical Engineering
Edit
S. Sedlmaier
University of the Bundeswehr Munich
Publications:
4
|
Citations:
43
Fields:
Electrical & Electronic Engineering
,
Mechanical Engineering
View FAQ about top research areas and Fields of study
Collaborated with
16 co-authors
from 2000 to 2006
|
Cited by
108 authors
Cumulative
Annual
Sort by:
Publications
(4)
BibTeX
|
RIS
|
RefWorks
Download
A 600V 8.7Ohmmm2Lateral Superjunction Transistor
M. RAba
,
M. Bar
,
G. Deml
,
H. Kapels
,
M. Schmitt
,
S. Sedlmaier
,
C. Tolksdorf
,
A. Willmeroth
Conference:
International Symposium on Power Semiconductor Devices and Ics - ISPSD
, 2006
Vertical tunnel field-effect transistor
(
Citations: 42
)
K. K. Bhuwalka
,
S. Sedlmaier
,
A. K. Ludsteck
,
C. Tolksdorf
,
J. Schulze
,
I. Eisele
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 51, no. 2, pp. 279-282, 2004
Multiple delta doping for improved driftzone design for lateral silicon power MOSFETs
C. Tolksdorf
,
A. Ludsteck
,
M. Schmidt
,
S. Sedlmaier
,
J. Schulze
,
I. Eisele
,
G. Deboy
Conference:
Device Research Conference - DRC
, 2003
MBE-grown vertical power-MOSFETs with 100-nm channel length
(
Citations: 1
)
C. Fink
,
K. G Anil
,
W. Hansch
,
S. Sedlmaier
,
J. Schulze
,
I. Eisele
Journal:
Thin Solid Films
, vol. 380, no. 1, pp. 207-210, 2000
Sort by:
Citations
(43 times by 43 publications)
Insights Into the Design and Optimization of Tunnel-FET Devices and Circuits
(
Citations: 2
)
Ashish Pal
,
Angada B. Sachid
,
Harald Gossner
,
V. Ramgopal Rao
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 4, pp. 1045-1053, 2011
Impact of a Spacer Dielectric and a Gate Overlap/Underlap on the Device Performance of a Tunnel Field-Effect Transistor
(
Citations: 1
)
Avik Chattopadhyay
,
Abhijit Mallik
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 3, pp. 677-683, 2011
InGaAs Tunneling Field-Effect-Transistors With Atomic-Layer-Deposited Gate Oxides
(
Citations: 1
)
H. Zhao
,
Y. Chen
,
Y. Wang
,
F. Zhou
,
F. Xue
,
J. Lee
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 9, pp. 2990-2995, 2011
Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source
Q. T. Zhao
,
W. J. Yu
,
B. Zhang
,
M. Schmidt
,
S. Richter
,
D. Buca
,
J.-M. Hartmann
,
R. Luptak
,
A. Fox
,
K. K. Bourdelle
,
S. Mantl
Conference:
Solid-State Device Research European Conference - ESSDERC
, pp. 251-254, 2011
Electrical results of vertical Si N-Tunnel FETs
A. Vandooren
,
D. Leonelli
,
R. Rooyackers
,
K. Arstila
,
G. Groeseneken
,
C. Huyghebaert
Conference:
Solid-State Device Research European Conference - ESSDERC
, pp. 255-258, 2011
Comments