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(230)
Umesh K. Mishra
29
Stacia Keller
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Jinwook W. Chung
22
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18
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Academic
Authors
Tomas Palacios
Tomas Palacios (Tomás Palacios),Massachusetts Institute of Technology,Electrical & Electronic Engineering,Chemical Physics & Material Physics,Networks
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Tomas Palacios (Tomás Palacios)
Massachusetts Institute of Technology
Publications:
122
|
Citations:
487
Fields:
Electrical & Electronic Engineering
,
Chemical Physics & Material Physics
,
Networks & Communications
View FAQ about top research areas and Fields of study
Collaborated with
230 co-authors
from 1989 to 2012
|
Cited by
1097 authors
Cumulative
Annual
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Publications
(122)
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Impact of $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation Thickness in Highly Scaled GaN HEMTs
Dong Seup Lee
,
Oleg Laboutin
,
Yu Cao
,
Wayne Johnson
,
Edward Beam
,
Andrew Ketterson
,
Michael Schuette
,
Paul Saunier
,
Tomás Palacios
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 33, no. 7, pp. 976-978, 2012
Delay Analysis of Graphene Field-Effect Transistors
Han Wang
,
Allen Hsu
,
Dong Seup Lee
,
Ki Kang Kim
,
Jing Kong
,
Tomas Palacios
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 33, no. 3, pp. 324-326, 2012
Integration of a phase change material for junction-level cooling in GaN devices
Daniel Piedra
,
Tapan G. Desai
,
Richard Bonner
,
Min Sun
,
Tomas Palacios
Conference:
Semiconductor Thermal Measurement and Management IEEE Symposium - SEMI-THERM
, pp. 169-172, 2012
3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier
Hyung-Seok Lee
,
Daniel Piedra
,
Min Sun
,
Xiang Gao
,
Shiping Guo
,
Tomás Palacios
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 33, no. 7, pp. 982-984, 2012
Tri-Gate Normally-Off GaN Power MISFET
Bin Lu
,
Elison Matioli
,
Tomás Palacios
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 33, no. 3, pp. 360-362, 2012
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Citations
(487 times by 346 publications)
245GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment
(
Citations: 4
)
Dong Seup Lee
,
Jinwook W. Chung
,
Han Wang
,
Xiang Gao
,
Shiping Guo
,
Patrick Fay
,
Tomás Palacios
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 6, pp. 755-757, 2011
InAlN/GaN HEMTs With AlGaN Back Barriers
(
Citations: 3
)
Dong Seup Lee
,
Xiang Gao
,
Shiping Guo
,
Tomás Palacios
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 5, pp. 617-619, 2011
Low-Phase-Noise Graphene FETs in Ambipolar RF Applications
(
Citations: 3
)
J. S. Moon
,
D. Curtis
,
D. Zehnder
,
S. Kim
,
D. K. Gaskill
,
G. G. Jernigan
,
R. L. Myers-Ward
,
C. R. Eddy
,
P. M. Campbell
,
K.-M. Lee
,
P. Asbeck
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 3, pp. 270-272, 2011
Compact Virtual-Source Current–Voltage Model for Top and Back-Gated Graphene Field-Effect Transistors
(
Citations: 2
)
Han Wang
,
Allen Hsu
,
Jing Kong
,
Dimitri A. Antoniadis
,
Tomas Palacios
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 5, pp. 1523-1533, 2011
210GHz InAlN/GaN HEMTs With Dielectric-Free Passivation
(
Citations: 2
)
Ronghua Wang
,
Guowang Li
,
Oleg Laboutin
,
Yu Cao
,
Wayne Johnson
,
Gregory Snider
,
Patrick Fay
,
Debdeep Jena
,
Huili Xing
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 7, pp. 892-894, 2011
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