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G. D. Wilk

G. D. Wilk,Purdue University,Electrical & Electronic Engineering,Mechanical Engineering,Nanotechnology

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G. D. Wilk

Purdue University

Publications: 34 | Citations: 1684

Fields: Electrical & Electronic Engineering, Mechanical Engineering, Nanotechnology

Collaborated with 1090 co-authors from 1996 to 2011 | Cited by 4269 authors

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Publications (34)

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Rapidity and transverse momentum dependence of inclusive J / ψ production in pp collisions at s = 7 TeV

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Journal: Fuel and Energy Abstracts , vol. 704, no. 5, pp. 442-455, 2011

Suppression of charged particle production at large transverse momentum in central Pb–Pb collisions at s NN = 2.76 TeV (Citations: 1)

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Journal: Fuel and Energy Abstracts , vol. 696, no. 1, pp. 30-39, 2011

Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing (Citations: 1)

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Conference: Advanced Semiconductor Manufacturing, IEEE/SEMI Conference and Workshop - ASMC , 2007

Atomic Layer Deposition of Hafnium Silicate from HfCl[sub 4], SiCl[sub 4], and H[sub 2]O (Citations: 1)

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Journal: Electrochemical and Solid State Letters - ELECTROCHEM SOLID STATE LETT , vol. 10, no. 5, 2007

28V planar GaAs MESFETs for wireless base-station power amplifiers

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Conference: IEEE Symposium on Compound Semiconductor Integrated Circuit - CSICS , 2005

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Citations (1684 times by 1354 publications)

Understanding the Potential and the Limits of Germanium pMOSFETs for VLSI Circuits From Experimental Measurements (Citations: 3)

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Journal: IEEE Transactions on Very Large Scale Integration Systems - VLSI , vol. 19, no. 9, pp. 1569-1582, 2011

A Static Model for Electrolyte-Gated Organic Field-Effect Transistors (Citations: 1)

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Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 58, no. 10, pp. 3574-3582, 2011

Floating Gate Memory With Biomineralized Nanodots Embedded in $\hbox{HfO}_{2}$

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Journal: IEEE Transactions on Nanotechnology - IEEE TRANS NANOTECHNOL , vol. 10, no. 3, pp. 576-581, 2011

Effect of $\hbox{NH}_{3}$ Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High$ \kappa$ Dielectric nMOSFETs

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Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 58, no. 3, pp. 812-818, 2011

Verilog-A model of a high-k HfO2Ta2O5 capacitor

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Published in 2011.

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Co-authors (1090)

Conferences (10)

Journals (6)

Keywords (81)

G. D. Wilk,Purdue University,Electrical & Electronic Engineering,Mechanical Engineering,Nanotechnology

Publications (34)

BibTeX | RIS | RefWorks Download

Rapidity and transverse momentum dependence of inclusive J / ψ production in pp collisions at s = 7 TeV

Suppression of charged particle production at large transverse momentum in central Pb–Pb collisions at s NN = 2.76 TeV (Citations: 1)

Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing (Citations: 1)

Atomic Layer Deposition of Hafnium Silicate from HfCl[sub 4], SiCl[sub 4], and H[sub 2]O (Citations: 1)

28V planar GaAs MESFETs for wireless base-station power amplifiers

Citations (1684 times by 1354 publications)

Understanding the Potential and the Limits of Germanium pMOSFETs for VLSI Circuits From Experimental Measurements (Citations: 3)

A Static Model for Electrolyte-Gated Organic Field-Effect Transistors (Citations: 1)

Floating Gate Memory With Biomineralized Nanodots Embedded in $\hbox{HfO}_{2}$

Effect of $\hbox{NH}_{3}$ Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High$ \kappa$ Dielectric nMOSFETs

Verilog-A model of a high-k HfO2Ta2O5 capacitor


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G. D. Wilk,Purdue University,Electrical & Electronic Engineering,Mechanical Engineering,Nanotechnology

Publications (34) BibTeX | RIS | RefWorks Download

Suppression of charged particle production at large transverse momentum in central Pb–Pb collisions at s NN = 2.76 TeV (Citations: 1)

Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing (Citations: 1)

Atomic Layer Deposition of Hafnium Silicate from HfCl[sub 4], SiCl[sub 4], and H[sub 2]O (Citations: 1)

Understanding the Potential and the Limits of Germanium pMOSFETs for VLSI Circuits From Experimental Measurements (Citations: 3)

A Static Model for Electrolyte-Gated Organic Field-Effect Transistors (Citations: 1)

Publications (34)

BibTeX | RIS | RefWorks Download