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Co-authors
(161)
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32
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27
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25
Deb Kumar Roy
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Authors
Vincent Huard
Vincent Huard,Algorithms & Theory,Electrical & Electronic Engineering,Nanotechnology
Edit
Vincent Huard
Publications:
68
|
Citations:
552
Fields:
Algorithms & Theory
,
Electrical & Electronic Engineering
,
Nanotechnology
View FAQ about top research areas and Fields of study
Collaborated with
161 co-authors
from 2002 to 2012
|
Cited by
1001 authors
Cumulative
Annual
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Publications
(68)
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RefWorks
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Design-in-Reliable Millimeter-Wave Power Amplifiers in a 65-nm CMOS Process
Thomas Quemerais
,
Laurence Moquillon
,
Jean-Michel Fournier
,
Philippe Benech
,
Vincent Huard
Journal:
IEEE Transactions on Microwave Theory and Techniques - IEEE TRANS MICROWAVE THEORY
, vol. 60, no. 4, pp. 1079-1085, 2012
Hot Carrier Injection degradation induced dispersion: Model and circuit-level measurement
F. Cacho
,
S. K. Singh
,
B. Singh
,
C. Parthasarathy
,
E. Pion
,
F. Argoud
,
X. Federspiel
,
H. Pitolet
,
D. Roy
,
V. Huard
Conference:
IEEE International Integrated Reliability Workshop Final Report - IRW
, pp. 137-141, 2011
Bottom-up digital system-level reliability modeling
N. Ruiz Amador
,
V. Huard
,
E. Pion
,
F. Cacho
,
D. Croain
,
V. Robert
,
S. Engels
,
P. Flatresse
,
L. Anghel
Conference:
Custom Integrated Circuits Conference - CICC
, pp. 1-4, 2011
Hot-carrier to cold-carrier device lifetime modeling with temperature for low power 40nm Si-bulk NMOS and PMOS FETs
A. Bravaix
,
V. Huard
,
D. Goguenheim
,
E. Vincent
Conference:
International Electron Devices Meeting - IEDM
, pp. 27.5.1-27.5.4, 2011
A bottom-up approach for System-On-Chip reliability
V. Huard
,
N. Ruiz
,
F. Cacho
,
E. Pion
Journal:
Microelectronics Reliability
, vol. 51, no. 9, pp. 1425-1439, 2011
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Citations
(552 times by 364 publications)
Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET
(
Citations: 2
)
Stanislav Tyaginov
,
Ivan Starkov
,
Oliver Triebl
,
Hajdin Ceric
,
Tibor Grasser
,
Hubert Enichlmair
,
Jong-Mun Park
,
Christoph Jungemann
Conference:
International Conference on Simulation of Semiconductor Processes and Devices - SISPAD
, pp. 123-126, 2011
A critical re-evaluation of the usefulness of RD framework in predicting NBTI stress and recovery
(
Citations: 2
)
S. Mahapatra
,
A. E. Islam
,
S. Deora
,
V. D. Maheta
,
K. Joshi
,
A. Jain
,
M. A. Alam
Published in 2011.
Concurrent NBTI and Hot-Carrier Degradation in p-Channel MuGFETs
(
Citations: 1
)
Tae Ha Kim
,
Chong Gun Yu
,
Jong Tae Park
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 3, pp. 294-296, 2011
Computer-Aided Analog Circuit Design for Reliability in Nanometer CMOS
(
Citations: 1
)
Elie Maricau
,
Georges Gielen
Journal:
IEEE Journal on Emerging and Selected Topics in Circuits and Systems - JETCAS
, vol. 1, no. 1, pp. 50-58, 2011
On the recoverable and permanent components of Hot Carrier and NBTI in Si pMOSFETs and their implications in Si0.45Ge0.55 pMOSFETs
(
Citations: 1
)
J. Franco
,
B. Kaczer
,
G. Eneman
,
Ph. J. Roussel
,
M. Cho
,
J. Mitard
,
L. Witters
,
T. Y. Hoffmann
,
G. Groeseneken
,
F. Crupi
,
T. Grasser
Published in 2011.
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