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Uttam Singisetti

Uttam Singisetti,University of California Santa Barbara,Electrical & Electronic Engineering,Chemical Physics & Material Physics

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Uttam Singisetti

University of California Santa Barbara

Publications: 32 | Citations: 52

Fields: Electrical & Electronic Engineering, Chemical Physics & Material Physics

Collaborated with 98 co-authors from 2003 to 2012 | Cited by 188 authors

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Publications (32)

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Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510mS/mm $g_{m}$, and 0.66-$\Omega\cdot \hbox{mm}$ $R_{\rm on}$

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 33, no. 1, pp. 26-28, 2012

Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth (Citations: 1)

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 2, pp. 137-139, 2011

Self-Aligned Technology for N-Polar GaN/Al(Ga)N MIS-HEMTs

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, pp. 33-35, 2011

Anomalous output conductance in N-polar GaN-based MIS-HEMTs

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Conference: Device Research Conference - DRC , pp. 211-212, 2011

Enhancement-Mode N-Polar GaN Metal--Insulator--Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz

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Journal: Applied Physics Express - APPL PHYS EXPRESS , 2011

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Citations (52 times by 46 publications)

20 NM metamorphic HEMT WITH 660 GHZ FT (Citations: 2)

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Published in 2011.

RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation (Citations: 1)

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 2, pp. 134-136, 2011

Deviation From Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density (Citations: 1)

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 4, pp. 491-493, 2011

A 300 GHz InP/GaAsSb/InP HBT for high data rate applications (Citations: 1)

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Published in 2011.

A role for graphene in silicon-based semiconductor devices

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Journal: Nature , vol. 479, no. 7373, pp. 338-344, 2011

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Co-authors (98)

Conferences (4)

Journals (8)

Keywords (71)

Uttam Singisetti,University of California Santa Barbara,Electrical & Electronic Engineering,Chemical Physics & Material Physics

Publications (32)

BibTeX | RIS | RefWorks Download

Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510mS/mm $g_{m}$, and 0.66-$\Omega\cdot \hbox{mm}$ $R_{\rm on}$

Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth (Citations: 1)

Self-Aligned Technology for N-Polar GaN/Al(Ga)N MIS-HEMTs

Anomalous output conductance in N-polar GaN-based MIS-HEMTs

Enhancement-Mode N-Polar GaN Metal--Insulator--Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz

Citations (52 times by 46 publications)

20 NM metamorphic HEMT WITH 660 GHZ FT (Citations: 2)

RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation (Citations: 1)

Deviation From Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density (Citations: 1)

A 300 GHz InP/GaAsSb/InP HBT for high data rate applications (Citations: 1)

A role for graphene in silicon-based semiconductor devices


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Uttam Singisetti,University of California Santa Barbara,Electrical & Electronic Engineering,Chemical Physics & Material Physics

Publications (32) BibTeX | RIS | RefWorks Download

Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth (Citations: 1)

20 NM metamorphic HEMT WITH 660 GHZ FT (Citations: 2)

RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation (Citations: 1)

Deviation From Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density (Citations: 1)

A 300 GHz InP/GaAsSb/InP HBT for high data rate applications (Citations: 1)

Publications (32)

BibTeX | RIS | RefWorks Download