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Co-authors
(86)
Umesh K. Mishra
52
Stacia Keller
27
Alessandro Chini
21
Dario Buttari
19
Robert Armstrong York
17
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(11)
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(8)
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Authors
S. Heikman
S. Heikman,Cree Inc,Electrical & Electronic Engineering
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S. Heikman
Cree Inc
Publications:
55
|
Citations:
644
Fields:
Electrical & Electronic Engineering
View FAQ about top research areas and Fields of study
Collaborated with
86 co-authors
from 1999 to 2008
|
Cited by
1567 authors
Cumulative
Annual
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Publications
(55)
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RefWorks
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A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz
(
Citations: 13
)
Yifeng Wu
,
Matt Jacob-Mitos
,
Marcia L. Moore
,
Sten Heikman
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 29, no. 8, pp. 824-826, 2008
AlGaN/GaN-on-SiC HEMT Technology Status
R. Peter Smith
,
S. Sheppard
,
Y.-F. Wu
,
S. Heikman
,
S. Wood
,
W. Pribble
,
J. W. Milligan
Conference:
IEEE Symposium on Compound Semiconductor Integrated Circuit - CSICS
, pp. 1-4, 2008
High-voltage Millimeter-Wave GaN HEMTs with 13.7 W/mm Power Density
(
Citations: 6
)
Y.-F. Wu
,
M. Moore
,
A. Abrahamsen
,
M. Jacob-Mitos
,
P. Parikh
,
S. Heikman
,
A. Burk
Conference:
International Electron Devices Meeting - IEDM
, 2007
AlGaN/GaN high electron mobility transistors with InGaN back-barriers
(
Citations: 61
)
T. Palacios
,
A. Chakraborty
,
S. Heikman
,
S. Keller
,
S. P. DenBaars
,
U. K. Mishra
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 27, no. 1, pp. 13-15, 2006
A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz
(
Citations: 14
)
Hongtao Xu
,
Steven Gao
,
Sten Heikman
,
Stephen I. Long
,
Umesh K. Mishra
,
Robert A. York
Journal:
IEEE Microwave and Wireless Components Letters - IEEE MICROW WIREL COMPON LETT
, vol. 16, no. 1, pp. 22-24, 2006
Sort by:
Citations
(644 times by 508 publications)
InAlN/GaN HEMTs With AlGaN Back Barriers
(
Citations: 3
)
Dong Seup Lee
,
Xiang Gao
,
Shiping Guo
,
Tomás Palacios
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 5, pp. 617-619, 2011
Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz
(
Citations: 1
)
K. Shinohara
,
D. Regan
,
I. Milosavljevic
,
A. L. Corrion
,
D. F. Brown
,
P. J. Willadsen
,
C. Butler
,
A. Schmitz
,
S. Kim
,
V. Lee
,
A. Ohoka
,
P. M. Asbeck
http://academic.research.microsoft.com/io.ashx?type=5&id=51187016&selfId1=1421404&selfId2=0&maxNumber=12&query=
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 8, pp. 1074-1076, 2011
1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on Resistance
(
Citations: 1
)
Rongming Chu
,
Andrea Corrion
,
Mary Chen
,
Ray Li
,
Danny Wong
,
Daniel Zehnder
,
Brian Hughes
,
Karim Boutros
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 5, pp. 632-634, 2011
300GHz InAlN/GaN HEMTs With InGaN Back Barrier
(
Citations: 1
)
Dong Seup Lee
,
Xiang Gao
,
Shiping Guo
,
David Kopp
,
Patrick Fay
,
Tomás Palacios
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 11, pp. 1525-1527, 2011
A Wideband Transformer-Coupled CMOS Power Amplifier for $X$Band Multifunction Chips
(
Citations: 1
)
Bon-Hyun Ku
,
Sang-Hyun Baek
,
Songcheol Hong
Journal:
IEEE Transactions on Microwave Theory and Techniques - IEEE TRANS MICROWAVE THEORY
, vol. 59, no. 6, pp. 1599-1609, 2011
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