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Co-authors
(14)
Shin Hong
6
Jimmie J. Wortman
6
Mehmet C. Ozturk (Mehmet C. Öztürk)
3
Amit Shah
2
Edward R. Myers
2
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(1)
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IEEE TRANS ELECTRON DEVICES
6
J ELECTROCHEM SOC
2
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2
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Authors
G. A. Ruggles
G. A. Ruggles,Electrical & Electronic Engineering
Edit
G. A. Ruggles
Publications:
12
|
Citations:
33
Fields:
Electrical & Electronic Engineering
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Collaborated with
14 co-authors
from 1986 to 1992
|
Cited by
102 authors
Cumulative
Annual
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Publications
(12)
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RefWorks
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Electrical characteristics of TiB2 for ULSI applications
(
Citations: 4
)
C. S. Choi
,
Q. Wang
,
C. M. Osburn
,
G. A. Ruggles
,
A. S. Shah
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 39, no. 10, pp. 2341-2345, 1992
Electrical characteristics of TiB/sub 2/ for ULSI applications
C. S. Choi
,
Q. Wang
,
C. M. Osburn
,
G. A. Ruggles
,
A. S. Shah
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 39, pp. 2341-2345, 1992
Material and electrical properties of ultra-shallow p+-n junctions formed by low-energy ion implantation and rapid thermal annealing
(
Citations: 12
)
Shin Nam Hong
,
Gary A. Ruggles
,
Jimmie J. Wortman
,
M. C. Ozturk
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 38, no. 3, pp. 476-486, 1991
Characterization of ultra-shallow p+-n junction diodes fabricated by 500eV boron-ion implantation
(
Citations: 9
)
Shin Nam Hong
,
Gary A. Ruggles
,
Jimmie J. Wortman
,
Edward R. Myers
,
John J. Hren
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 38, no. 1, pp. 28-31, 1991
Characterization of ultra-shallow p/sup +/-n junction diodes fabricated by 500eV boron-ion implantation
S. N. Hong
,
G. A. Ruggles
,
J. J. Wortman
,
E. R. Myers
,
J. J. Hren
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 38, pp. 28-31, 1991
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Citations
(33 times by 29 publications)
Characterization of p+-n Junctions and a Quasi-One-Dimensional Structure Fabricated by Low-Energy Focused Ion Beam
Peerasak Chantngarm
Published in 2009.
Microstructure and electrical properties of diborides modified by rapid thermal annealing
W. ZAGOZDZON-WOSIK
,
I. RUSAKOVA
,
C. DARNE
,
Z.-H. ZHANG
,
P. VAN DER HEIDE
,
P. MAJHI
Journal:
Journal of Microscopy-oxford - J MICROSC-OXFORD
, vol. 223, no. 3, pp. 227-230, 2006
Energy Dependence of Radiation Damage in Sb-Implanted Si(100)
Yi-Sheng Lai
,
J. S. Chen
,
Y. S. Ho
,
H. L. Sun
,
C. J. Tsai
,
T. C. Chen
,
Y. F. Ko
,
F. S. Lee
,
W. M. You
Journal:
Journal of The Electrochemical Society - J ELECTROCHEM SOC
, vol. 152, no. 7, 2005
Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth
(
Citations: 4
)
R. Lindsay
,
K. Henson
,
W. Vandervorst
,
K. Maex
,
B. J. Pawlak
,
R. Duffy
,
R. Surdeanu
,
P. Stolk
,
J. A. Kittl
,
S. Giangrandi
,
X. Pages
,
K. van der Jeugd
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
, vol. 22, no. 1, 2004
A CMOS image sensor with dark-current cancellation and dynamic sensitivity operations
(
Citations: 11
)
Hsiu-Yu Cheng
,
Ya-Chin King
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 50, no. 1, pp. 91-95, 2003
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