Sign in
Author
|
Conference
|
Journal
|
Organization
|
Year
|
DOI
Look for results that meet for the following criteria:
since
equal to
before
between
and
Search in all fields of study
Limit my searches in the following fields of study
Agriculture Science
Arts & Humanities
Biology
Chemistry
Computer Science
Economics & Business
Engineering
Environmental Sciences
Geosciences
Material Science
Mathematics
Medicine
Physics
Social Science
Multidisciplinary
Co-authors
(6)
Jian Song
1
Karim El Sayed
1
Christopher Stanton
1
Andrew J. Fischer
1
D.-J. Kim
1
Conferences
(1)
CLEO/Pacific Rim
1
Journals
(1)
IEEE TRANS ELECTRON DEVICES
2
Keywords
(8)
Embed
Subscribe
Academic
Authors
J. A. Kenrow
J. A. Kenrow,Electrical & Electronic Engineering
Edit
J. A. Kenrow
Publications:
3
|
Citations:
3
Fields:
Electrical & Electronic Engineering
View FAQ about top research areas and Fields of study
Collaborated with
6 co-authors
from 1999 to 2005
|
Cited by
13 authors
Cumulative
Annual
Sort by:
Publications
(3)
BibTeX
|
RIS
|
RefWorks
Download
Characterization and analysis of OFET devices based on TCAD simulations
(
Citations: 3
)
Julie A. Kenrow
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 52, no. 9, pp. 2034-2041, 2005
Characterization and Analysis of OFET Devices Based on TCAD Simulations
J. A. Kenrow
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 52, pp. 2034-2041, 2005
Femtosecond coherent and incoherent spectroscopies on GaN
Y. D. Jho
,
D. S. Kim
,
A. J. Fischer
,
J. J. Song
,
J. Kenrow
,
K. El Sayed
,
C. J. Stanton
Conference:
Pacific Rim Conference on Lasers and Electro-Optics - CLEO/Pacific Rim
, 1999
Sort by:
Citations
(3 times by 3 publications)
Performance Investigation of 50-nm Insulated-Shallow-Extension Gate-Stack (ISEGaS) MOSFET for Mixed Mode Applications
(
Citations: 6
)
Ravneet Kaur
,
Rishu Chaujar
,
Manoj Saxena
,
R. S. Gupta
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 54, no. 2, pp. 365-368, 2007
Low-Temperature Transport Characteristics and Quantum-Confinement Effects in Gate-All-Around Si-Nanowire N-MOSFET
(
Citations: 6
)
Subhash C. Rustagi
,
N. Singh
,
Y. F. Lim
,
G. Zhang
,
S. Wang
,
G. Q. Lo
,
N. Balasubramanian
,
D.-L. Kwong
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 28, no. 10, pp. 909-912, 2007
A new approach for numerical simulation of quantum transport in double-gate SOI
(
Citations: 1
)
Tarek M. Abdolkader
Journal:
International Journal of Numerical Modelling-electronic Networks Devices and Fields - INT J NUMER MODEL ELECTRON N
, vol. 20, no. 6, pp. 299-309, 2007
Comments