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Wootae Lee

Wootae Lee,Gwangju Institute of Science & Technology,Electrical & Electronic Engineering,Nanotechnology,Chemical Physics & Material Physics

Wootae Lee

Gwangju Institute of Science & Technology

Publications: 39 | Citations: 35

Fields: Electrical & Electronic Engineering, Nanotechnology, Chemical Physics & Material Physics

Collaborated with 67 co-authors from 2007 to 2012 | Cited by 80 authors

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Publications (39)

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Self-Selective Characteristics of Nanoscale $ \hbox{VO}_{x}$ Devices for High-Density ReRAM Applications

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 33, no. 5, pp. 718-720, 2012

Co-Occurrence of Threshold Switching and Memory Switching in $\hbox{Pt}/\hbox{NbO}_{x}/\hbox{Pt}$ Cells for Crosspoint Memory Applications

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 33, no. 2, pp. 236-238, 2012

Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices

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Journal: Nanotechnology - NANOTECHNOL , vol. 23, no. 32, 2012

Improved Switching Variability and Stability by Activating a Single Conductive Filament

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 33, no. 5, pp. 646-648, 2012

Excellent State Stability of Cu/SiC/Pt Programmable Metallization Cells for Nonvolatile Memory Applications (Citations: 1)

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 5, pp. 680-682, 2011

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Citations (35 times by 28 publications)

Excellent State Stability of Cu/SiC/Pt Programmable Metallization Cells for Nonvolatile Memory Applications (Citations: 1)

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 5, pp. 680-682, 2011

Ultralow Switching Energy Ni/$\hbox{GeO}_{x}$ /HfON/TaN RRAM (Citations: 1)

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 3, pp. 366-368, 2011

Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM (Citations: 1)

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Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 58, no. 10, pp. 3246-3253, 2011

Analytical approach to single memristor circuits

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Conference: European Conference on Circuit Theory and Design - ECCTD , 2011

Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 3, pp. 276-278, 2011

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