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Co-authors
(69)
Asen Asenov
24
Jeremy R. Watling
13
Craig L. Alexander
11
Andrew R. Brown
8
Scott Roy
7
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(7)
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Authors
Craig Riddet
Craig Riddet,University of Glasgow,Electrical & Electronic Engineering,Physics,Nanotechnology
Edit
Craig Riddet
University of Glasgow
Publications:
24
|
Citations:
49
Fields:
Electrical & Electronic Engineering
,
Physics
,
Nanotechnology
View FAQ about top research areas and Fields of study
Collaborated with
69 co-authors
from 2004 to 2012
|
Cited by
113 authors
Cumulative
Annual
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Publications
(24)
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RefWorks
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Hole Mobility in Germanium as a Function of Substrate and Channel Orientation, Strain, Doping, and Temperature
Craig Riddet
,
Jeremy R. Watling
,
Kah-Hou Chan
,
Evan H. C. Parker
,
Terence E. Whall
,
David R. Leadley
,
Asen Asenov
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 59, no. 7, pp. 1878-1884, 2012
Monte Carlo Simulations of Ge Implant Free Quantum Well FETs - The Role of Substrate and Channel Orientation
Kah Hou Chan
,
Craig Riddet
,
Jeremy R. Watling
,
Asen Asenov
Conference:
International SiGe Technology and Device Meeting - ISTDM
, 2012
Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET
(
Citations: 1
)
K. H. Chan
,
B. Benbakhti
,
C. Riddet
,
J. R. Watling
,
A. Asenov
Journal:
Microelectronic Engineering - MICROELECTRON ENG
, vol. 88, no. 4, pp. 362-365, 2011
Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach
Brahim Benbakhti
,
KahHou Chan
,
Ewan Towie
,
Karol Kalna
,
Craig Riddet
,
Xingsheng Wang
,
Geert Eneman
,
Geert Hellings
,
Kristin De Meyer
,
Marc Meuris
,
Asen Asenov
Journal:
Solid-state Electronics - SOLID STATE ELECTRON
, vol. 63, no. 1, pp. 14-18, 2011
Simulation of “Ab Initio” Quantum Confinement Scattering in UTB MOSFETs Using Three-Dimensional Ensemble Monte Carlo
Craig Riddet
,
Craig Alexander
,
Andrew R. Brown
,
Scott Roy
,
Asen Asenov
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 3, pp. 600-608, 2011
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Citations
(49 times by 40 publications)
Nanoscale and Device Level Gate Conduction Variability of High-k Dielectrics-Based MetalOxideSemiconductor Structures
Albin Bayerl
,
Mario Lanza
,
Marc Porti
,
Montserrat Nafria
,
Xavier Aymerich
,
F. Campabadal
,
Günther Benstetter
Journal:
IEEE Transactions on Device and Materials Reliability - IEEE TRANS DEVICE MATER RELIA
, vol. 11, no. 3, pp. 495-501, 2011
Device variability and correlation control by automated tuning of SPICE cards to PCM measurements
Alberto Revelant
,
Luca Lucci
,
Luca Selmi
,
Benno Ankele
Conference:
IEEE International Conference on Microelectronic Test Structures - ICMTS
, pp. 147-152, 2011
Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study
Xingsheng Wang
,
Andrew R. Brown
,
Niza Idris
,
Stanislav Markov
,
Gareth Roy
,
Asen Asenov
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 8, pp. 2293-2301, 2011
Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization
Runsheng Wang
,
Jing Zhuge
,
Ru Huang
,
Tao Yu
,
Jibin Zou
,
Dong-Won Kim
,
Yangyuan Wang
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 8, pp. 2317-2325, 2011
Simulation of “Ab Initio” Quantum Confinement Scattering in UTB MOSFETs Using Three-Dimensional Ensemble Monte Carlo
Craig Riddet
,
Craig Alexander
,
Andrew R. Brown
,
Scott Roy
,
Asen Asenov
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 3, pp. 600-608, 2011
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