Daniele Ielmini

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Journals (10)

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Daniele Ielmini

Daniele Ielmini

Politecnico di Milano

Publications: 128 | Citations: 987 | G-Index: 24 | H-Index: 17

Interests: Electrical & Electronic Engineering, Nanotechnology, Material Science

Collaborated with 180 co-authors from 1999 to 2011; Cited by 1364 authors

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Publications (128)

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Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories (Citations: 5)

F. Nardi, D. Ielmini, C. Cagli, S. Spiga, M. Fanciulli, L. Goux, D. J. Wouters

Journal: Solid-state Electronics - SOLID STATE ELECTRON , vol. 58, no. 1, pp. 42-47, 2011
Filament diffusion model for simulating reset and retention processes in RRAM (Citations: 1)

S. Larentis, C. Cagli, F. Nardi, D. Ielmini

Journal: Microelectronic Engineering - MICROELECTRON ENG , vol. 88, no. 7, pp. 1119-1123, 2011
Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM (Citations: 1)

Daniele Ielmini, Federico Nardi, Carlo Cagli

Published in 2011.
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories

Mattia Boniardi, Daniele Ielmini, Innocenzo Tortorelli, Andrea Redaelli, Agostino Pirovano, Mario Allegra, Michele Magistretti, Camillo Bresolin, Davide Erbetta, Alberto Modelli, Enrico Varesi, Fabio Pellizzerhttp://academic.research.microsoft.com/io.ashx?type=5&id=49136010&selfId1=2056805&selfId2=0&maxNumber=12&query=

Journal: Solid-state Electronics - SOLID STATE ELECTRON , vol. 58, no. 1, pp. 11-16, 2011
Nanowire-based RRAM crossbar memory with metallic core-oxide shell nanostructure

C. Cagli, F. Nardi, D. Ielmini, B. Harteneck, Z. Tan, Y. Zhang

Conference: Solid-State Device Research European Conference - ESSDERC , pp. 103-106, 2011

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Citations (987 times by 466 publications)

Resistance and Threshold Switching Voltage Drift Behavior in PhaseChange Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a MicroThermal Stage (Citations: 3)

SangBum Kim, Byoungil Lee, Mehdi Asheghi, Fred Hurkx, John P. Reifenberg, Kenneth E. Goodson, H.-S. Philip Wong

Published in 2011.
Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM) (Citations: 2)

Shimeng Yu, H.-S. Philip Wong

Published in 2011.
Programming algorithms for multilevel phase-change memory (Citations: 1)

N. Papandreou, H. Pozidis, A. Pantazi, A. Sebastian, M. Breitwischt, C. Lam, E. Eleftheriou

Conference: IEEE International Symposium on Circuits and Systems - ISCAS , pp. 329-332, 2011
New Set/Reset Scheme for Excellent Uniformity in Bipolar Resistive Memory (Citations: 1)

Minseok Jo, Seungjae Jung, Joonmyoung Lee, Wootae Lee, Seonghyun Kim, Jungho Shin, Hyunsang Hwang

Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 3, pp. 228-230, 2011
Ultralow Switching Energy Ni/$\hbox{GeO}_{x}$ /HfON/TaN RRAM (Citations: 1)

C. H. Cheng, Albert Chin, F. S. Yeh

Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 3, pp. 366-368, 2011

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