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Co-authors
(75)
Siegfried Selberherr
44
Johann Cervenka
18
Roberto Lacerda de Orio
15
Tibor Grasser
13
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Academic
Authors
Hajdin Ceric
Hajdin Ceric,Vienna University of Technology,Algorithms & Theory,Material Science,Electrical & Electronic Engineering
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Hajdin Ceric
Vienna University of Technology
Publications:
61
|
Citations:
60
Fields:
Algorithms & Theory
,
Material Science
,
Electrical & Electronic Engineering
View FAQ about top research areas and Fields of study
Collaborated with
75 co-authors
from 2002 to 2012
|
Cited by
107 authors
Cumulative
Annual
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Publications
(61)
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RefWorks
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Through Silicon Via Reliability
Cathal Cassidy
,
Jochen Kraft
,
Sara Carniello
,
Frederic Roger
,
Hajdin Ceric
,
Anderson Pires Singulani
,
Erasmus Langer
,
Franz Schrank
Journal:
IEEE Transactions on Device and Materials Reliability - IEEE TRANS DEVICE MATER RELIA
, vol. 12, no. 2, pp. 285-295, 2012
Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET
(
Citations: 2
)
Stanislav Tyaginov
,
Ivan Starkov
,
Oliver Triebl
,
Hajdin Ceric
,
Tibor Grasser
,
Hubert Enichlmair
,
Jong-Mun Park
,
Christoph Jungemann
Conference:
International Conference on Simulation of Semiconductor Processes and Devices - SISPAD
, pp. 123-126, 2011
A simulator for local anodic oxidation of silicon surfaces
(
Citations: 1
)
Lado Filipovic
,
Hajdin Ceric
,
Johann Cervenka
,
Siegfried Selberherr
Conference:
Canadian Conference on Electrical and Computer Engineering - CCECE
, pp. 000695-000698, 2011
Multilevel simulation for the investigation of fast diffusivity paths
H. Ceric
,
R. L. de Orio
,
F. Schanovsky
,
W. H. Zisser
,
S. Selberherr
Conference:
International Conference on Simulation of Semiconductor Processes and Devices - SISPAD
, pp. 135-138, 2011
Hot-carrier degradation caused interface state profile---Simulation versus experiment
I. Starkov
,
S. Tyaginov
,
H. Enichlmair
,
J. Cervenka
,
C. Jungemann
,
S. Carniello
,
J. M. Park
,
H. Ceric
,
T. Grasser
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
, vol. 29, 2011
Sort by:
Citations
(60 times by 49 publications)
Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET
(
Citations: 2
)
Stanislav Tyaginov
,
Ivan Starkov
,
Oliver Triebl
,
Hajdin Ceric
,
Tibor Grasser
,
Hubert Enichlmair
,
Jong-Mun Park
,
Christoph Jungemann
Conference:
International Conference on Simulation of Semiconductor Processes and Devices - SISPAD
, pp. 123-126, 2011
Neutron refractive index of liquid mixtures in the critical region
L. A. Bulavin
,
A. V. Chalyi
,
K. A. Chalyy
,
L. M. Chernenko
,
K. K. Godinskii
,
A. V. Severin
Journal:
Journal of Molecular Liquids - J MOL LIQ
, vol. 162, no. 1, pp. 7-11, 2011
Multilevel simulation for the investigation of fast diffusivity paths
H. Ceric
,
R. L. de Orio
,
F. Schanovsky
,
W. H. Zisser
,
S. Selberherr
Conference:
International Conference on Simulation of Semiconductor Processes and Devices - SISPAD
, pp. 135-138, 2011
Grain boundary as relevant microstructure feature for electromigration in advanced technology studied by Electron BackScattered Diffraction
R. Galand
,
L. Arnaud
,
E. Petitprez
,
G. Brunetti
,
L. Clement
,
P. Waltz
,
Y. Wouters
Conference:
Interconnect Technology, IEEE International Conference - IITC
, pp. 1-3, 2011
Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETs
Ivan Starkov
,
Hajdin Ceric
,
Stanislav Tyaginov
,
Tibor Grasser
,
Hubert Enichlmair
,
Jong-Mun Park
,
Christoph Jungemann
Conference:
International Conference on Simulation of Semiconductor Processes and Devices - SISPAD
, pp. 127-130, 2011
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