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Co-authors
(246)
Mikhail R. Baklanov
26
Werner Boullart
22
Karen Maex
13
Vasile Paraschiv
9
Stefan De Gendt
9
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Academic
Authors
Denis Shamiryan
Denis Shamiryan,Catholic University of Leuven,Electrical & Electronic Engineering,Nanotechnology,Material Science
Edit
Denis Shamiryan
Catholic University of Leuven
Publications:
72
|
Citations:
360
Fields:
Electrical & Electronic Engineering
,
Nanotechnology
,
Material Science
View FAQ about top research areas and Fields of study
Collaborated with
246 co-authors
from 2000 to 2011
|
Cited by
1260 authors
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Annual
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Publications
(72)
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Patterning of 25 nm Contact Holes at 90 nm Pitch: Combination of Line/Space Double Exposure Immersion Lithography and Plasma-Assisted Shrink Technology
Jean-Francois de Marneffe
,
Frédéric Lazzarino
,
Danny Goossens
,
Alain Vandervorst
,
Olivier Richard
,
Denis Shamiryan
,
Kaidong Xu
,
Vincent Truffert
,
Werner Boullart
Journal:
Japanese Journal of Applied Physics
, vol. 50, 2011
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
A. Redolfi
,
E. Sleeckx
,
K. Devriendt
,
D. Shamiryan
,
T. Vandeweyer
,
N. Horiguchi
,
M. Togo
,
J. M. D. Wouter
,
M. Jurczak
,
T. Hoffmann
,
A. Cockburn
,
V. Gravey
http://academic.research.microsoft.com/io.ashx?type=5&id=51041416&selfId1=21970548&selfId2=0&maxNumber=12&query=
Conference:
International Conference on Ultimate Integration of Silicon - ULIS
, 2011
Effect of UV wavelength on the hardening process of porogen-containing and porogen-free ultralow-k plasma-enhanced chemical vapor deposition dielectrics
Adam M. Urbanowicz
,
Kris Vanstreels
,
Patrick Verdonck
,
Els van Besien
,
Trompoukis Christos
,
Denis Shamiryan
,
Stefan de Gendt
,
Mikhail R. Baklanov
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
, vol. 29, 2011
Evaluation of a New Advanced Low-k Material
Evgeny A. Smirnov
,
Kris Vanstreels
,
Patrick Verdonck
,
Ivan Ciofi
,
Denis Shamiryan
,
Mikhail R. Baklanov
,
Mark Phillips
Journal:
Japanese Journal of Applied Physics
, vol. 50, 2011
Integrated diffusion–recombination model for describing the logarithmic time dependence of plasma damage in porous low- k materials
E. Kunnen
,
G. T. Barkema
,
C. Maes
,
D. Shamiryan
,
A. Urbanowicz
,
H. Struyf
,
M. R. Baklanov
Journal:
Microelectronic Engineering - MICROELECTRON ENG
, vol. 88, no. 5, pp. 631-634, 2011
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Citations
(360 times by 322 publications)
Understanding the Potential and the Limits of Germanium pMOSFETs for VLSI Circuits From Experimental Measurements
(
Citations: 3
)
P. Magnone
,
F. Crupi
,
M. Alioto
,
B. Kaczer
,
B. De Jaeger
Journal:
IEEE Transactions on Very Large Scale Integration Systems - VLSI
, vol. 19, no. 9, pp. 1569-1582, 2011
Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness
(
Citations: 1
)
Pavel Poliakov
,
Pieter Blomme
,
Miguel Miranda Corbalan
,
Jan Van Houdt
,
Wim Dehaene
Journal:
Microelectronics Reliability
, vol. 51, no. 5, pp. 919-924, 2011
Comparative Evaluation of Layout Density in 3T, 4T, and MT FinFET Standard Cells
(
Citations: 1
)
Massimo Alioto
Journal:
IEEE Transactions on Very Large Scale Integration Systems - VLSI
, vol. 19, no. 5, pp. 751-762, 2011
On the recoverable and permanent components of Hot Carrier and NBTI in Si pMOSFETs and their implications in Si0.45Ge0.55 pMOSFETs
(
Citations: 1
)
J. Franco
,
B. Kaczer
,
G. Eneman
,
Ph. J. Roussel
,
M. Cho
,
J. Mitard
,
L. Witters
,
T. Y. Hoffmann
,
G. Groeseneken
,
F. Crupi
,
T. Grasser
Published in 2011.
The Effect of Donor/Acceptor Nature of Interface Traps on Ge MOSFET Characteristics
(
Citations: 1
)
Duygu Kuzum
,
Jin-Hong Park
,
Tejas Krishnamohan
,
H.-S. Philip Wong
,
Krishna C. Saraswat
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 4, pp. 1015-1022, 2011
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