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Co-authors
(164)
Fabien Boulanger
7
Gilles Reimbold
6
Barbara De Salvo
5
Luca Perniola
5
C. Gaumer
5
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(6)
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Academic
Authors
Sandrine Lhostis
Sandrine Lhostis,Trinity College,Electrical & Electronic Engineering,Nanotechnology,Algorithms & Theory
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Sandrine Lhostis
Trinity College
Publications:
17
|
Citations:
32
Fields:
Electrical & Electronic Engineering
,
Nanotechnology
,
Algorithms & Theory
View FAQ about top research areas and Fields of study
Collaborated with
164 co-authors
from 2003 to 2011
|
Cited by
182 authors
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Annual
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Publications
(17)
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Demonstration of Phase Change Memories devices using Ge2Sb2Te5 films deposited by Atomic Layer Deposition
S. Maitrejean
,
S. Lhostis
,
S. Haukka
,
C. Jahan
,
E. Gourvest
,
R. Matero
,
T. Blomberg
,
A. Toffoli
,
A. Persico
,
C. Jayet
,
M. Veillerot
,
J. P. Barnes
http://academic.research.microsoft.com/io.ashx?type=5&id=51067789&selfId1=21972191&selfId2=0&maxNumber=12&query=
Conference:
Interconnect Technology, IEEE International Conference - IITC
, pp. 1-3, 2011
Impact of the TiN electrode deposition on the HfO 2 band gap for advanced MOSFET gate stacks
C. Gaumer
,
E. Martinez
,
S. Lhostis
,
M.-J. Guittet
,
M. Gros-Jean
,
J.-P. Barnes
,
C. Licitra
,
N. Rochat
,
N. Barrett
,
F. Bertin
,
A. Chabli
Journal:
Microelectronic Engineering - MICROELECTRON ENG
, vol. 88, no. 1, pp. 72-75, 2011
Electrical Behavior of PhaseChange Memory Cells Based on GeTe
(
Citations: 4
)
Luca Perniola
,
Veronique Sousa
,
Andrea Fantini
,
Edrisse Arbaoui
,
Audrey Bastard
,
Marilyn Armand
,
Alain Fargeix
,
Carine Jahan
,
Jean-François Nodin
,
Alain Persico
,
Denis Blachier
,
Alain Toffoli
Sandrine Lhostis
http://academic.research.microsoft.com/io.ashx?type=5&id=27064765&selfId1=21972191&selfId2=0&maxNumber=12&query=
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 31, no. 5, pp. 488-490, 2010
On Carbon doping to improve GeTe-based PhaseChange Memory data retention at high temperature
(
Citations: 2
)
G. B. Beneventi
,
E. Gourvest
,
A. Fantini
,
L. Perniola
,
V. Sousa
,
S. Maitrejean
,
J. C. Bastien
,
A. Bastard
,
A. Fargeix
,
B. Hyot
,
C. Jahan
,
J. F. Nodin
S. Lhostis
http://academic.research.microsoft.com/io.ashx?type=5&id=50893760&selfId1=21972191&selfId2=0&maxNumber=12&query=
Conference:
IEEE International Memory Workshop, IMW - IMW
, 2010
Carbon-doped GeTe PhaseChange Memory featuring remarkable RESET current reduction
(
Citations: 1
)
G. B. Beneventi
,
L. Perniola
,
A. Fantini
,
D. Blachier
,
A. Toffoli
,
E. Gourvest
,
S. Maitrejean
,
V. Sousa
,
C. Jahan
,
J. F. Nodin
,
A. Persico
,
S. Loubriat
S. Lhostis
http://academic.research.microsoft.com/io.ashx?type=5&id=50969096&selfId1=21972191&selfId2=0&maxNumber=12&query=
Conference:
Solid-State Device Research European Conference - ESSDERC
, pp. 313-316, 2010
Sort by:
Citations
(32 times by 31 publications)
Full Two-Dimensional Markov Chain Analysis of Thermal Soft Errors in Subthreshold Nanoscale CMOS Devices
(
Citations: 1
)
Pooya Jannaty
,
Florian Cosmin Sabou
,
R. Iris Bahar
,
Joseph Mundy
,
William R. Patterson
,
Alexander Zaslavsky
Journal:
IEEE Transactions on Device and Materials Reliability - IEEE TRANS DEVICE MATER RELIA
, vol. 11, no. 1, pp. 50-59, 2011
Work-Function-Tuned TiN Metal Gate FDSOI Transistors for Subthreshold Operation
(
Citations: 1
)
Steven A. Vitale
,
Jakub Kedzierski
,
Paul Healey
,
Peter W. Wyatt
,
Craig L. Keast
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 2, pp. 419-426, 2011
Physical and electrical characterization of Germanium or Tellurium rich GexTe1−x for phase change memories
N. Pashkov
,
G. Navarro
,
J.-C. Bastien
,
M. Suri
,
L. Perniola
,
V. Sousa
,
S. Maitrejean
,
A. Persico
,
A. Roule
,
A. Toffoli
,
G. Reimbold
,
B. De Salvo
http://academic.research.microsoft.com/io.ashx?type=5&id=51145017&selfId1=21972191&selfId2=0&maxNumber=12&query=
Conference:
Solid-State Device Research European Conference - ESSDERC
, pp. 91-94, 2011
Demonstration of Phase Change Memories devices using Ge2Sb2Te5 films deposited by Atomic Layer Deposition
S. Maitrejean
,
S. Lhostis
,
S. Haukka
,
C. Jahan
,
E. Gourvest
,
R. Matero
,
T. Blomberg
,
A. Toffoli
,
A. Persico
,
C. Jayet
,
M. Veillerot
,
J. P. Barnes
http://academic.research.microsoft.com/io.ashx?type=5&id=51067789&selfId1=21972191&selfId2=0&maxNumber=12&query=
Conference:
Interconnect Technology, IEEE International Conference - IITC
, pp. 1-3, 2011
Impacts of Zr Composition in $\hbox{Hf}_{1-x} \hbox{Zr}_{x}\hbox{O}_{y}$ Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics
Hyung-Suk Jung
,
So-Ah Lee
,
Sang-ho Rha
,
Sang Young Lee
,
Hyo Kyeom Kim
,
Do Hyun Kim
,
Kyu Hwan Oh
,
Jung-Min Park
,
Weon-Hong Kim
,
Min-Woo Song
,
Nae-In Lee
,
Cheol Seong Hwang
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 7, pp. 2094-2103, 2011
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