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Co-authors
(42)
Cedric Bermond (Cédric Bermond)
7
Bernard Flechet
6
Thierry Lacrevaz
5
Serge Blonkowski
4
Alexis Farcy
3
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Authors
Thomas Bertaud
Thomas Bertaud,Europa Universität Viadrina Frankfurt Oder,Electrical & Electronic Engineering,Nanotechnology,Computer Science
Edit
Thomas Bertaud
Europa Universität Viadrina Frankfurt Oder
Publications:
10
|
Citations:
4
Fields:
Electrical & Electronic Engineering
,
Nanotechnology
,
Computer Science
View FAQ about top research areas and Fields of study
Collaborated with
42 co-authors
from 2008 to 2011
|
Cited by
26 authors
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Annual
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Publications
(10)
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RefWorks
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Resistive switching characteristics of CMOS embedded HfO 2-based 1T1R cells
(
Citations: 1
)
D. Walczyk
,
Ch. Walczyk
,
T. Schroeder
,
T. Bertaud
,
M. Sowińska
,
M. Lukosius
,
M. Fraschke
,
B. Tillack
,
Ch. Wenger
Journal:
Microelectronic Engineering - MICROELECTRON ENG
, vol. 88, no. 7, pp. 1133-1135, 2011
Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$Based RRAM Devices
Christian Walczyk
,
Damian Walczyk
,
Thomas Schroeder
,
Thomas Bertaud
,
Malgorzata Sowinska
,
Mindaugas Lukosius
,
Mirko Fraschke
,
Dirk Wolansky
,
Bernd Tillack
,
Enrique Miranda
,
Christian Wenger
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 9, pp. 3124-3131, 2011
Lateral Field Excitation of membrane-based Aluminum Nitride resonators
M. Gorisse
,
A. Reinhardt
,
C. Billard
,
M. Borel
,
E. Defay
,
T. Bertaud
,
T. Lacrevaz
,
C. Bermond
Conference:
IEEE International Frequency Control Symposium - FCS
, pp. 1-5, 2011
Wideband frequency and in situ characterization of aluminum nitride (AlN) in a metal/insulator/metal (MIM) configuration
T. Bertaud
,
E. Defay
,
C. Bermond
,
T. Lacrevaz
,
J. Abergel
,
B. Salem
,
S. Capraro
,
B. Flechet
Journal:
Microelectronic Engineering - MICROELECTRON ENG
, vol. 88, no. 5, pp. 564-568, 2011
Wideband frequency and in situ characterization of ultra thin ZrO 2 and HfO 2 films for integrated MIM capacitors
(
Citations: 2
)
T. Bertaud
,
C. Bermond
,
T. Lacrevaz
,
C. Vallée
,
Y. Morand
,
B. Fléchet
,
A. Farcy
,
M. Gros-Jean
,
S. Blonkowski
Journal:
Microelectronic Engineering - MICROELECTRON ENG
, vol. 87, no. 3, pp. 301-305, 2010
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Citations
(4 times by 4 publications)
Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$Based RRAM Devices
Christian Walczyk
,
Damian Walczyk
,
Thomas Schroeder
,
Thomas Bertaud
,
Malgorzata Sowinska
,
Mindaugas Lukosius
,
Mirko Fraschke
,
Dirk Wolansky
,
Bernd Tillack
,
Enrique Miranda
,
Christian Wenger
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 9, pp. 3124-3131, 2011
Electrical characterization and impact on signal integrity of new basic interconnection elements inside 3D integrated circuits
J. Roullard
,
S. Capraro
,
A. Farcy
,
T. Lacrevaz
,
C. Bermond
,
P. Leduc
,
J. Charbonnier
,
C. Ferrandon
,
C. Fuchs
,
B. Flechet
Conference:
Electronic Components and Technology Conference - ECTC
, pp. 1176-1182, 2011
Frequency Effect on Voltage Linearity of Based RF Metal–Insulator–Metal Capacitors
Thomas Bertaud
,
Serge Blonkowski
,
Cédric Bermond
,
Christophe Vallée
,
Patrice Gonon
,
Michaël Gros-Jean
,
Bernard Fléchet
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 31, no. 2, pp. 114-116, 2010
DC to radio-frequency characterization of ZrO2 dielectric for “Metal-Insulator-Metal” integrated capacitors
T. Bertaud
,
C. Vallee
,
C. Bermond
,
T. Lacrevaz
,
B. Flechet
,
A. Farcy
,
S. Blonkovski
Conference:
Microwave , Asia-Pacific Conference - APMC
, 2009
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