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Co-authors
(37)
Koichi Yamada (山田宏一)
2
Tsunetoshi Arikado
2
Kenji Shiraishi
2
Keisaku Yamada
2
Masaru Kadoshima
2
Conferences
(2)
VLSIT
2
TENCON
1
Journals
(2)
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1
Hyomen Kagaku
1
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Authors
T. Chikyo
T. Chikyo,Electrical & Electronic Engineering
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T. Chikyo
Publications:
5
|
Citations:
25
Fields:
Electrical & Electronic Engineering
View FAQ about top research areas and Fields of study
Collaborated with
37 co-authors
from 2004 to 2010
|
Cited by
123 authors
Cumulative
Annual
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Publications
(5)
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RefWorks
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Sp-bonded new phases of BN; their growth by laser-plasma synchronous processing and applications
S. Komastu
,
K. Kobayashi
,
T. Nagata
,
T. Chikyo
Conference:
TENCON, IEEE Region 10 International Conference - TENCON
, pp. 993-994, 2010
Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High CMOSFETs
(
Citations: 2
)
Masaru Kadoshima
,
Takeo Matsuki
,
Seiichi Miyazaki
,
Kenji Shiraishi
,
Toyohiro Chikyo
,
Keisaku Yamada
,
Takayuki Aoyama
,
Yasuo Nara
,
Yuzuru Ohji
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 30, no. 5, pp. 466-468, 2009
Improved FET characteristics by laminate design optimization of metal gates - Guidelines for optimizing metal gate stack structure -
(
Citations: 3
)
M. Kadoshima
,
T. Matsuki
,
N. Mise
,
M. Sato
,
M. Hayashi
,
T. Aminaka
,
E. Kurosawa
,
M. Kitajima
,
S. Miyazaki
,
K. Shiraishi
,
T. Chikyo
,
K. Yamada
http://academic.research.microsoft.com/io.ashx?type=5&id=50667122&selfId1=22342451&selfId2=0&maxNumber=12&query=
Conference:
VLSI Technology, Symposium - VLSIT
, 2008
Characterization of Open Spaces in High.KAPPA. Materials by Monoenergetic Positron Beams
Akira UEDONO
,
Masakazu GOTO
,
Keiichi HIGUCHI
,
Kouhei IKEUCHI
,
Kikuo YAMABE
,
Kenji SHIRAISHI
,
Toyohiro CHIKYO
,
Keisaku YAMADA
,
Hiroshi KITAJIMA
,
Riichirou MITSUHASHI
,
Atsushi HORIUCHI
,
Kazuyoshi TORII
http://academic.research.microsoft.com/io.ashx?type=5&id=45080845&selfId1=22342451&selfId2=0&maxNumber=12&query=
Journal:
Hyomen Kagaku
, vol. 26, no. 5, pp. 268-273, 2005
Physics in Fermi level pinning at the polySi/Hf-based high-k oxide interface
(
Citations: 20
)
K. Shiraishi
,
K. Yamada
,
K. Torii
,
Y. Akasaka
,
K. Nakajima
,
M. Kohno
,
T. Chikyo
,
H. Kitajima
,
T. Arikado
Conference:
VLSI Technology, Symposium - VLSIT
, 2004
Sort by:
Citations
(25 times by 25 publications)
The study of flat-band voltage shift using arsenic ion-implantation with High-k/Metal Inserted Poly Si gate stacks
BeomYong Kim
,
YunHyuck Ji
,
SeungMi Lee
,
BongSeok Jeon
,
KeeJeung Lee
,
Kwon Hong
,
SungKi Park
Conference:
Solid-State Device Research European Conference - ESSDERC
, pp. 79-82, 2011
Gallium-Incorporated TiN Metal Gate With Band-Edge Work Function and Excellent Thermal Stability for PMOS Device Applications
Qiuxia Xu
,
Gaobo Xu
,
Qingqing Liang
,
Yuan Yao
,
Xiaofeng Duan
,
Junfeng Li
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 9, pp. 1197-1199, 2011
TiN Metal Gate Electrode Thickness Effect on BTI and Dielectric Breakdown in HfSiON-Based MOSFETs
Chien-Liang Chen
,
Ya-Chin King
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 11, pp. 3736-3742, 2011
Measurement of Dipoles/Roll-Off /Work Functions by Coupling CV and IPE and Study of Their Dependence on Fabrication Process
(
Citations: 1
)
Matthieu Charbonnier
,
Charles Leroux
,
V. Cosnier
,
P. Besson
,
E. Martinez
,
N. Benedetto
,
Christophe Licitra
,
Névine Rochat
,
C. Gaumer
,
K. Kaja
,
Gérard Ghibaudo
,
François Martin
http://academic.research.microsoft.com/io.ashx?type=5&id=27038423&selfId1=22342451&selfId2=0&maxNumber=12&query=
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 57, no. 8, pp. 1809-1819, 2010
Charge Trapping and Detrapping Behavior of Fluorinated Gate Stacked nMOSFET
Yung-Yu Chen
,
Chih-Ren Hsieh
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 31, no. 11, pp. 1178-1180, 2010
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