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Co-authors
(391)
Gianluca Fiori
80
Massimo Macucci
68
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23
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22
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21
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Authors
Giuseppe Iannaccone
Giuseppe Iannaccone,University of Pisa,Electrical & Electronic Engineering,Condensed Matter Physics,Nanotechnology
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Giuseppe Iannaccone
University of Pisa
Publications:
312
|
Citations:
868
Fields:
Electrical & Electronic Engineering
,
Condensed Matter Physics
,
Nanotechnology
View FAQ about top research areas and Fields of study
Collaborated with
391 co-authors
from 1994 to 2011
|
Cited by
1784 authors
Cumulative
Annual
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Publications
(312)
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A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference
(
Citations: 1
)
Luca Magnelli
,
Felice Crupi
,
Pasquale Corsonello
,
Calogero Pace
,
Giuseppe Iannaccone
Journal:
IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS
, vol. 46, no. 2, pp. 465-474, 2011
A microscopically accurate model of partially ballistic nanoMOSFETs in saturation based on channel backscattering
(
Citations: 1
)
Gino Giusi
,
Giuseppe Iannaccone
,
Felice Crupi
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 3, pp. 691-697, 2011
Collection type
M. Hempel
,
J. W. Tomm
,
P. Hennig
,
T. Elsaesser
,
V. Y. Aleshkin
,
DI Burdeiny
,
M. Cheralathan
,
C. Sampedro
,
JB Rold'an
,
F. G'amiz
,
Giuseppe Iannaccone
Journal:
Semiconductor Science and Technology - SEMICOND SCI TECHNOL
, vol. 26, 2011
Nanodevices in Flatland: Two-dimensional graphene-based transistors with high Ion/Ioff ratio
G. Fiori
,
A. Betti
,
S. Bruzzone
,
P. D'Amico
,
G. Iannaccone
Conference:
International Electron Devices Meeting - IEDM
, pp. 11.4.1-11.4.4, 2011
CMOS Silicon Physical Unclonable Functions Based on Intrinsic Process Variability
Stefano Stanzione
,
Daniele Puntin
,
Giuseppe Iannaccone
Journal:
IEEE Journal of Solid-state Circuits - IEEE J SOLID-STATE CIRCUITS
, vol. 46, no. 6, pp. 1-1, 2011
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Citations
(868 times by 639 publications)
A 1.6-V 17-µA 5.2-ppm/°C bandgap reference with mutative curvature-compensation
Zekun Zhou
,
Yue Shi
,
Peisheng Zhu
,
Yingqian Ma
,
Huiying Wang
,
Xin Ming
,
Bo Zhang
Journal:
International Journal of Electronics - INT J ELECTRON
, vol. 99, no. 4, pp. 519-530, 2012
A comparative study of NEGF and DDMS models in the GAA silicon nanowire transistor
Reza Hosseini
,
Morteza Fathipour
,
Rahim Faez
Journal:
International Journal of Electronics - INT J ELECTRON
, vol. ahead-of-p, no. ahead-of-p, pp. 1-9, 2012
A 1-V, 16.9 ppm/ $^{\circ}$ C, 250 nA Switched-Capacitor CMOS Voltage Reference
(
Citations: 3
)
Chun-Yu Hsieh
,
Hong-Wei Huang
,
Ke-Horng Chen
Journal:
IEEE Transactions on Very Large Scale Integration Systems - VLSI
, vol. 19, no. 4, pp. 659-667, 2011
A Low-Power Process-and-Temperature-Compensated Ring Oscillator with Addition-Based Current Source
(
Citations: 3
)
Xuan Zhang
,
Alyssa B. Apsel
Journal:
IEEE Transactions on Circuits and Systems I-regular Papers - IEEE TRANS CIRCUIT SYST-I
, vol. 58, no. 5, pp. 868-878, 2011
Mode Space Approach for Tight Binding Transport Simulation in Graphene Nanoribbon FETs
(
Citations: 2
)
Roberto Grassi
,
Antonio Gnudi
,
Elena Gnani
,
Susanna Reggiani
,
Giorgio Baccarani
Journal:
IEEE Transactions on Nanotechnology - IEEE TRANS NANOTECHNOL
, vol. 10, no. 3, pp. 371-378, 2011
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