Sign in
Author
|
Conference
|
Journal
|
Organization
|
Year
|
DOI
Look for results that meet for the following criteria:
since
equal to
before
between
and
Search in all fields of study
Limit my searches in the following fields of study
Agriculture Science
Arts & Humanities
Biology
Chemistry
Computer Science
Economics & Business
Engineering
Environmental Sciences
Geosciences
Material Science
Mathematics
Medicine
Physics
Social Science
Multidisciplinary
Co-authors
(15)
Patrick J. McMarr
4
Karl D. Hobart
3
Robert E. Stahlbush
3
Marko J. Tadjer
3
Sarah K. Haney
3
Journals
(3)
J ELECTRON MATER
6
MATER SCI FORUM
1
Rare Metals
1
Keywords
(18)
Embed
Subscribe
Academic
Authors
Hap L. Hughes
Hap L. Hughes,US Naval Research Laboratory,Metallurgy
Edit
Hap L. Hughes
US Naval Research Laboratory
Publications:
8
|
Citations:
2
Fields:
Metallurgy
View FAQ about top research areas and Fields of study
Collaborated with
15 co-authors
from 1990 to 2010
|
Cited by
8 authors
Cumulative
Annual
Sort by:
Publications
(8)
BibTeX
|
RIS
|
RefWorks
Download
Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current
Marko J. Tadjer
,
Robert E. Stahlbush
,
Karl D. Hobart
,
Patrick J. McMarr
,
Hap L. Hughes
,
Eugene A. Imhoff
,
Fritz J. Kub
,
Sarah K. Haney
,
Anant Agarwal
Journal:
Journal of Electronic Materials - J ELECTRON MATER
, vol. 39, no. 5, pp. 517-525, 2010
Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current
Marko J. Tadjer
,
Robert E. Stahlbush
,
Karl D. Hobart
,
Patrick J. McMarr
,
Hap L. Hughes
,
Eugene A. Imhoff
,
Fritz J. Kub
,
Sarah K. Haney
,
Anant Agarwal
Journal:
Journal of Electronic Materials - J ELECTRON MATER
, vol. 39, pp. 517-525, 2010
Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation
Marko J. Tadjer
,
Karl D. Hobart
,
Robert E. Stahlbush
,
Patrick J. McMarr
,
Hap L. Hughes
,
Fritz J. Kub
,
Sarah K. Haney
Journal:
Materials Science Forum - MATER SCI FORUM
, vol. 645-648, pp. 469-472, 2010
Improvement in electrical properties of SIMOX by high-temperature oxidation
B. J. Mrstik
,
P. J. McMarr
,
H. L. Hughes
,
M. J. Anc
,
W. A. Krull
Journal:
Rare Metals
, 1995
The effect of post-implantation annealing temperature on the deep states present in SIMOX MOSFET’s as observed using enhancement mode current DLTS
(
Citations: 1
)
P. K. McLarty
,
D. E. Ioannou
,
H. L. Hughes
Journal:
Journal of Electronic Materials - J ELECTRON MATER
, vol. 19, no. 5, pp. 449-452, 1990
Sort by:
Citations
(2 times by 2 publications)
The kink-related excess low-frequency noise in silicon-on-insulator MOST's
(
Citations: 23
)
E. Simoen
,
Ulf Magnusson
,
Antonio L. P. Rotondaro
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 41, no. 3, pp. 330-339, 1994
Low-frequency noise and DC characterization of ionization damage in a 1-μm SOI CMOS technology adapted for space applications
(
Citations: 1
)
E. Simoen
,
U. Magnusson
,
G. Van den bosch
,
P. Smeys
,
J. P. Colinge
,
C. Claeys
Conference:
European Conference on Radiation and its Effects on Components and Systems - RADECS
, 1993
Comments