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Academic

Takuya Futase

Takuya Futase,University of Tsukuba,Electrical & Electronic Engineering

Takuya Futase

University of Tsukuba

Publications: 18 | Citations: 20

Fields: Electrical & Electronic Engineering

Collaborated with 51 co-authors from 1999 to 2011 | Cited by 40 authors

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Publications (18)

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${\rm TiCl}_{4}$ Soak on NiSi: Selective Formation of Pure Sub-Nanometer NiTi to Reduce Contact Resistance (Citations: 1)

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Journal: IEEE Transactions on Semiconductor Manufacturing - IEEE TRANS SEMICONDUCT MANUF , vol. 24, no. 2, pp. 325-332, 2011

Removing imperceptible fluoride residue after chemical dry-cleaning to fabricate uniform low-resistance NiSi film

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Journal: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures , vol. 29, 2011

Stress-induced voids in Ni-Pt silicide: Disconnection of narrow (Ni-Pt)Si between gate canyons on wide active area

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Conference: Interconnect Technology, IEEE International Conference - IITC , pp. 1-3, 2011

Uniform, Low-Resistive Ni-Pt Silicide Fabricated by Partial Conversion With Low Metal-Consumption Ratio

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Journal: IEEE Transactions on Semiconductor Manufacturing - IEEE TRANS SEMICONDUCT MANUF , vol. 24, no. 4, pp. 545-551, 2011

Partial conversion as a first silicidation process to fabricate low-resistive and low-leakage nickel silicide film in advanced CMOSs

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Conference: International Workshop on Junction Technology - IWJT , 2011

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Citations (20 times by 13 publications)

${\rm TiCl}_{4}$ Soak on NiSi: Selective Formation of Pure Sub-Nanometer NiTi to Reduce Contact Resistance (Citations: 1)

, , ,

Journal: IEEE Transactions on Semiconductor Manufacturing - IEEE TRANS SEMICONDUCT MANUF , vol. 24, no. 2, pp. 325-332, 2011

Mechanism of Contact Resistance Reduction in Nickel Silicide Films by Pt Incorporation

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Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 58, no. 11, pp. 3778-3786, 2011

Uniform, Low-Resistive Ni-Pt Silicide Fabricated by Partial Conversion With Low Metal-Consumption Ratio

, , ,

Journal: IEEE Transactions on Semiconductor Manufacturing - IEEE TRANS SEMICONDUCT MANUF , vol. 24, no. 4, pp. 545-551, 2011

Pattern-independent, fine-morphology Ni-Pt silicide formation by partial conversion with low metal-consumption ratio (Citations: 3)

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Published in 2010.

Crystalline grain size of nickel-platinum silicide films and their impact on device characteristics (Citations: 1)

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Published in 2010.

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