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Co-authors
(51)
Hisanori Tanimoto
8
Hirohiko Yamamoto
7
Naoto Hashikawa
7
Yutaka Inaba
7
Takeshi Kamino
6
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Authors
Takuya Futase
Takuya Futase,University of Tsukuba,Electrical & Electronic Engineering
Edit
Takuya Futase
University of Tsukuba
Publications:
18
|
Citations:
20
Fields:
Electrical & Electronic Engineering
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Collaborated with
51 co-authors
from 1999 to 2011
|
Cited by
40 authors
Cumulative
Annual
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Publications
(18)
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${\rm TiCl}_{4}$ Soak on NiSi: Selective Formation of Pure Sub-Nanometer NiTi to Reduce Contact Resistance
(
Citations: 1
)
Takuya Futase
,
Naoto Hashikawa
,
Hirohiko Yamamoto
,
Hisanori Tanimoto
Journal:
IEEE Transactions on Semiconductor Manufacturing - IEEE TRANS SEMICONDUCT MANUF
, vol. 24, no. 2, pp. 325-332, 2011
Removing imperceptible fluoride residue after chemical dry-cleaning to fabricate uniform low-resistance NiSi film
Takuya Futase
,
Hisanori Tanioto
,
Mitsuo Kimoto
,
Hideaki Tsugane
,
Hidenori Suzuki
,
Hiroshi Tobimatsu
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
, vol. 29, 2011
Stress-induced voids in Ni-Pt silicide: Disconnection of narrow (Ni-Pt)Si between gate canyons on wide active area
Takuya Futase
,
Toshiyuki Oashi
,
Hitoshi Maeda
,
Yutaka Inaba
,
Hisanori Tanimoto
Conference:
Interconnect Technology, IEEE International Conference - IITC
, pp. 1-3, 2011
Uniform, Low-Resistive Ni-Pt Silicide Fabricated by Partial Conversion With Low Metal-Consumption Ratio
Takuya Futase
,
Takeshi Kamino
,
Yutaka Inaba
,
Hisanori Tanimoto
Journal:
IEEE Transactions on Semiconductor Manufacturing - IEEE TRANS SEMICONDUCT MANUF
, vol. 24, no. 4, pp. 545-551, 2011
Partial conversion as a first silicidation process to fabricate low-resistive and low-leakage nickel silicide film in advanced CMOSs
Takuya Futase
,
Takeshi Kamino
,
Yutaka Inaba
,
Hisanori Tanimoto
Conference:
International Workshop on Junction Technology - IWJT
, 2011
Sort by:
Citations
(20 times by 13 publications)
${\rm TiCl}_{4}$ Soak on NiSi: Selective Formation of Pure Sub-Nanometer NiTi to Reduce Contact Resistance
(
Citations: 1
)
Takuya Futase
,
Naoto Hashikawa
,
Hirohiko Yamamoto
,
Hisanori Tanimoto
Journal:
IEEE Transactions on Semiconductor Manufacturing - IEEE TRANS SEMICONDUCT MANUF
, vol. 24, no. 2, pp. 325-332, 2011
Mechanism of Contact Resistance Reduction in Nickel Silicide Films by Pt Incorporation
Takeshi Sonehara
,
Akira Hokazono
,
Haruko Akutsu
,
Tomokazu Sasaki
,
Hiroshi Uchida
,
Mitsuhiro Tomita
,
Shigeru Kawanaka
,
Satoshi Inaba
,
Yoshiaki Toyoshima
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 11, pp. 3778-3786, 2011
Uniform, Low-Resistive Ni-Pt Silicide Fabricated by Partial Conversion With Low Metal-Consumption Ratio
Takuya Futase
,
Takeshi Kamino
,
Yutaka Inaba
,
Hisanori Tanimoto
Journal:
IEEE Transactions on Semiconductor Manufacturing - IEEE TRANS SEMICONDUCT MANUF
, vol. 24, no. 4, pp. 545-551, 2011
Pattern-independent, fine-morphology Ni-Pt silicide formation by partial conversion with low metal-consumption ratio
(
Citations: 3
)
Takuya Futase
,
Takeshi Kamino
,
Naoto Hashikawa
,
Yutaka Inaba
,
Tetsuo Fujiwara
,
Hirohiko Yamamoto
,
Hisanori Tanimoto
Published in 2010.
Crystalline grain size of nickel-platinum silicide films and their impact on device characteristics
(
Citations: 1
)
Yoshiki Yonamoto
,
Takuya Futase
,
Naotoshi Akamatsu
,
Yutaka Inaba
,
Hisanori Tanimoto
Published in 2010.
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