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Co-authors
(14)
Dong-Hyun Baek
3
Kyoungmin Koh
2
Song-Cheol Hong
2
Ju-Hyun Ko
2
Jeonghu Han
2
Conferences
(1)
RFIC
3
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Authors
Ilhun Shon
Ilhun Shon,Engineering
Edit
Ilhun Shon
Publications:
3
|
Citations:
7
Fields:
Engineering
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Collaborated with
14 co-authors
in 2005
|
Cited by
22 authors
Cumulative
Annual
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Publications
(3)
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Properties of RFLDMOS with low resistive substrate for handset power applications
(
Citations: 6
)
Juhyun Ko
,
Sunhak Lee
,
Han-Soo Oh
,
Joo-Hyun Jeong
,
Donghyun Baek
,
Kyoungmin Koh
,
Jeonghu Han
,
Songcheol Hong
,
Ilhun Shon
Conference:
Radio Frequency Integrated Circuits IEEE Symposium - RFIC
, pp. 61-64, 2005
An improved silicon RF LDMOSFET model with a new extraction method for nonlinear drift resistance
(
Citations: 1
)
Kyungho Lee
,
Jehyung Yoon
,
Jounghyun Yim
,
Jongchan Kang
,
Donghyun Baek
,
Soonhag Lee
,
Ilhun Shon
,
Bumman Kim
Conference:
Radio Frequency Integrated Circuits IEEE Symposium - RFIC
, pp. 153-156, 2005
A large-signal model of RF LDMOS with skin effects of power combining structures
Jeonghu Han
,
Donghyun Baek
,
Kyoungmin Koh
,
Juhyun Ko
,
Ilhun Shon
,
Songcheol Hong
Conference:
Radio Frequency Integrated Circuits IEEE Symposium - RFIC
, pp. 149-152, 2005
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Citations
(7 times by 7 publications)
A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors
John P. Everett
,
Michael J. Kearney
,
Hernan Rueda
,
Eric M. Johnson
,
Peter H. Aaen
,
John Wood
,
Christopher M. Snowden
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 9, pp. 3081-3088, 2011
Improved RF Power Performance in a 0.18- $\mu\hbox{m}$ MOSFET Which Uses an Asymmetric Drain Design
(
Citations: 4
)
T. Chang
,
H. L. Kao
,
S. P. McAlister
,
K. Y. Horng
,
Albert Chin
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 29, no. 12, pp. 1402-1404, 2008
Characterization and modeling of Asymmetric LDD MOSFET for 65nm CMOS RF Power Amplifier design
(
Citations: 1
)
Kai-Ye Huang
,
Po-Chih Wang
,
Meng-Chi Hung
,
Yuh-Sheng Jean
,
Ta-Hsun Yeh
,
Ying-Hsi Lin
Conference:
Radio Frequency Integrated Circuits IEEE Symposium - RFIC
, pp. 263-266, 2008
A CMOS-compatible, high RF power, Asymmetric-LDD MOSFET with excellent linearity
T. Chang
,
H. L. Kao
,
Y. J. Chen
,
S. L. Liu
,
S. P. McAlister
,
Albert Chin
Conference:
International Electron Devices Meeting - IEDM
, pp. 1-4, 2008
Improved RF Power Performance in a 0.18- MOSFET Which Uses an Asymmetric Drain Design
T. Chang
,
H. L. Kao
,
S. P. McAlister
,
K. Y. Horng
,
Albert Chin
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 29, no. 12, pp. 1402-1404, 2008
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