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Co-authors
(170)
Ru-Qi Han
92
Xiao-Yan Liu
86
Gang Du
39
Li-Feng Liu
26
De-Dong Han
15
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Academic
Authors
Jin-Feng Kang
Jin-Feng Kang,Peking University,Electrical & Electronic Engineering,Nanotechnology,Atomic & Molecular Physics
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Jin-Feng Kang
Peking University
Publications:
110
|
Citations:
116
Fields:
Electrical & Electronic Engineering
,
Nanotechnology
,
Atomic & Molecular Physics
View FAQ about top research areas and Fields of study
Collaborated with
170 co-authors
from 1995 to 2012
|
Cited by
371 authors
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Annual
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Publications
(110)
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A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices
Yang Lu
,
Bin Gao
,
Yihan Fu
,
Bing Chen
,
Lifeng Liu
,
Xiaoyan Liu
,
Jinfeng Kang
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 33, no. 3, pp. 306-308, 2012
The influence of thermally assisted tunneling on the performance of charge trapping memory
Peng Ya-Hua
,
Liu Xiao-Yan
,
Du Gang
,
Liu Fei
,
Jin Rui
,
Kang Jin-Feng
Journal:
Chinese Physics B - CHIN PHYS B
, vol. 21, no. 7, 2012
Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach
Haowei Zhang
,
Lifeng Liu
,
Bin Gao
,
Yuanjun Qiu
,
Xiaoyan Liu
,
Jing Lu
,
Ruqi Han
,
Jinfeng Kang
,
Bin Yu
Journal:
Applied Physics Letters - APPL PHYS LETT
, vol. 98, 2011
Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory
Bin Gao
,
Haowei Zhang
,
Bing Chen
,
Lifeng Liu
,
Xiaoyan Liu
,
Ruqi Han
,
Jinfeng Kang
,
Zheng Fang
,
Hongyu Yu
,
Bin Yu
,
Dim-Lee Kwong
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 3, pp. 276-278, 2011
Engineering oxide resistive switching materials for memristive device application
Lifeng Liu
,
Bing Chen
,
Bin Gao
,
Feifei Zhang
,
Yuansha Chen
,
Xiaoyan Liu
,
Yi Wang
,
Ruqi Han
,
Jinfeng Kang
Journal:
Applied Physics A-materials Science & Processing - APPL PHYS A-MAT SCI PROCESS
, vol. 102, no. 4, pp. 991-996, 2011
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Citations
(116 times by 101 publications)
A High-Yield $\hbox{HfO}_{x}$Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration
(
Citations: 2
)
X. A. Tran
,
H. Y. Yu
,
Y. C. Yeo
,
L. Wu
,
W. J. Liu
,
Z. R. Wang
,
Z. Fang
,
K. L. Pey
,
X. W. Sun
,
A. Y. Du
,
B. Y. Nguyen
,
M. F. Li
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 3, pp. 396-398, 2011
Endoscopic removal of self-expandable metal stents from the esophagus (with video)
(
Citations: 1
)
Nicoline C. M. van Heel
,
Jelle Haringsma
,
Bas P. L. Wijnhoven
,
Ernst J. Kuipers
Journal:
Gastrointestinal Endoscopy - GASTROINTEST ENDOSCOP
, vol. 74, no. 1, pp. 44-50, 2011
Ultralow Switching Energy Ni/$\hbox{GeO}_{x}$ /HfON/TaN RRAM
(
Citations: 1
)
C. H. Cheng
,
Albert Chin
,
F. S. Yeh
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 3, pp. 366-368, 2011
Design implications of memristor-based RRAM cross-point structures
(
Citations: 2
)
Cong Xu
,
Xiangyu Dong
,
Norman P. Jouppi
,
Yuan Xie
Published in 2011.
Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM
(
Citations: 1
)
Daniele Ielmini
,
Federico Nardi
,
Carlo Cagli
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 10, pp. 3246-3253, 2011
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