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Co-authors
(41)
Eric R. Ooms
7
Fred G. Kuper
4
Benno H. Krabbenborg
3
F. W. Ragay
2
A. W. Ludikhuize
2
Conferences
(3)
IRPS
5
ISPSD
3
ESREF
3
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(1)
Microelectronics Reliability
7
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Authors
Jacob A. van der Pol
Jacob A. van der Pol,Engineering,Algorithms & Theory
Edit
Jacob A. van der Pol
Publications:
18
|
Citations:
101
Fields:
Engineering
,
Algorithms & Theory
View FAQ about top research areas and Fields of study
Collaborated with
41 co-authors
from 1990 to 2002
|
Cited by
228 authors
Cumulative
Annual
Sort by:
Publications
(18)
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RefWorks
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Extended (180 V) voltage in 0.6 μm thin-layer-SOI A-BCD3 technology on 1 μm BOX for display, automotive and consumer applications
(
Citations: 5
)
A. W. Ludikhuize
,
J. A. van der Pol
,
A. Heringa
,
A. Padiy
,
E. R. Ooms
,
P. van Kessel
,
G. J. J. Hessels
,
M. J. Swanenberg
,
B. van Velzen
,
H. van der Vlist
,
J. H. H. A. Egbers
,
M. Stoutjesdijk
Conference:
International Symposium on Power Semiconductor Devices and Ics - ISPSD
, 2002
Robustness of LDMOS power transistors in SOI-BCD processes and derivation of design rules using thermal simulation
(
Citations: 3
)
B. H. Krabbenborg
,
J. A. Van der Pol
Conference:
International Symposium on Power Semiconductor Devices and Ics - ISPSD
, pp. 157-160, 2001
A-BCD: An economic 100 V RESURF silicon-on-insulator BCD technology for consumer and automotive applications
(
Citations: 19
)
J. A. van der Pol
,
A. W. Ludikhuize
,
H. G. A. Huizing
,
B. van Velzen
,
R. J. E. Hueting
,
J. F. Mom
,
G. van Lijnschoten
,
G. J. J. Hessels
,
E. F. Hooghoudt
,
R. van Huizen
,
M. J. Swanenberg
,
J. H. H. A. Egbers
http://academic.research.microsoft.com/io.ashx?type=5&id=50189162&selfId1=53688998&selfId2=0&maxNumber=12&query=
Conference:
International Symposium on Power Semiconductor Devices and Ics - ISPSD
, pp. 327-330, 2000
Model and design rules for eliminating surface potential induced failures in high voltage integrated circuits
(
Citations: 1
)
Jacob A. van der Pol
,
R. T. H. Rongen
,
H. J. Bruggers
Journal:
Microelectronics Reliability
, vol. 40, no. 8, pp. 1267-1272, 2000
New latchup mechanism in complementary bipolar power ICs triggered by backside die attach Glue
(
Citations: 1
)
J. A. van der Pol
,
J.-P. F. Huijser
,
R. B. H. Basten
Journal:
Microelectronics Reliability
, vol. 39, no. 6, pp. 863-868, 1999
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Citations
(101 times by 84 publications)
A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET
Antonios Bazigos
,
François Krummenacher
,
Jean-Michel Sallese
,
Matthias Bucher
,
Ehrenfried Seebacher
,
Werner Posch
,
Kund Molnár
,
Mingchun Tang
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 6, pp. 1710-1721, 2011
Integration of 100V LDMOS devices in 0.35μm CMOS technology
Soon Tat Kong
,
Paul Stribley
,
Chris Lee
,
Michaelina Ong
Conference:
International Symposium on Power Semiconductor Devices and Ics - ISPSD
, pp. 176-179, 2011
A New Built-In Defect-Based Testing Technique to Achieve Zero Defects in the Automotive Environment
Vezio Malandruccolo
,
Mauro Ciappa
,
Hubert Rothleitner
,
Wolfgang Fichtner
Journal:
Journal of Electronic Testing
, vol. 27, no. 1, pp. 19-30, 2011
In situ screening techniques for defective oxides in devices for automotive applications
V. Malandruccolo
,
M. Ciappa
,
W. Fichtner
,
H. Rothleitner
Published in 2011.
Small embedded sensors for accurate temperature measurements in DMOS power transistors
(
Citations: 6
)
Martin Pfost
,
D. Costachescu
,
A. Podgaynaya
,
M. Stecher
,
S. Bychikhin
,
D. Pogany
,
E. Gornik
Conference:
IEEE International Conference on Microelectronic Test Structures - ICMTS
, 2010
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