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A. T. Kalghatgi

A. T. Kalghatgi,Central Research Laboratory, Bharat Electronics,Polymer Chemistry,Composite Materials,Metallurgy

A. T. Kalghatgi

Central Research Laboratory, Bharat Electronics

Publications: 6 Citations:

Fields: Polymer Chemistry, Composite Materials, Metallurgy

Collaborated with 12 co-authors from 2010 to 2011

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Publications (6)

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Reduction of oxygen impurity at GaN/β-Si 3N 4/Si interface via SiO 2 to Ga 2O conversion by exposing of Si surface under Ga flux

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Journal: Journal of Crystal Growth - J CRYST GROWTH , vol. 327, no. 1, pp. 272-275, 2011

Reduction of oxygen impurity at GaN/beta-Si3N4/Si interface via SiO2 to Ga2O conversion by exposing of Si surface under Ga flux

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Journal: Journal of Crystal Growth - J CRYST GROWTH , vol. 327, pp. 272-275, 2011

Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE

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Journal: Materials Letters - MATER LETT , vol. 65, no. 9, pp. 1396-1399, 2011

Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE

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Journal: Materials Research Bulletin - MATER RES BULL , vol. 45, no. 11, pp. 1581-1585, 2010

Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy

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Journal: Bulletin of Materials Science - BULL MATER SCI , vol. 33, no. 3, pp. 221-226, 2010

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