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Co-authors
(74)
Jianfeng Kang
20
Xiao Yan Liu
13
L.-F. J. LIU
13
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11
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Academic
Authors
Bao Yu Gao
Bao Yu Gao,Peking University,Electrical & Electronic Engineering,Applied Chemistry,Polymer Chemistry
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Bao Yu Gao
Peking University
Publications:
27
|
Citations:
66
Fields:
Electrical & Electronic Engineering
,
Applied Chemistry
,
Polymer Chemistry
View FAQ about top research areas and Fields of study
Collaborated with
74 co-authors
from 2003 to 2012
|
Cited by
241 authors
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Publications
(27)
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A Self-Rectifying $\hbox{HfO}_{x}$ Based Unipolar RRAM With NiSi Electrode
X. A. Tran
,
W. G. Zhu
,
B. Gao
,
J. F. Kang
,
W. J. Liu
,
Z. Fang
,
Z. R. Wang
,
Y. C. Yeo
,
B. Y. Nguyen
,
M. F. Li
,
H. Y. Yu
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 33, no. 4, pp. 585-587, 2012
Oxide-Based RRAM: A Novel Defect-Engineering-Based Implementation for Multilevel Data Storage
J. F. Kang
,
B. Gao
,
B. Chen
,
L. F. Liu
,
X. Y. Liu
,
H. Y. Yu
,
Z. R. Wang
,
B. Yu
Conference:
IEEE International Memory Workshop, IMW - IMW
, 2012
Comparison of coagulation behavior and floc characteristics of titanium tetrachloride (TiCl 4) and polyaluminum chloride (PACl) with surface water treatment
(
Citations: 2
)
Y. X. Zhao
,
B. Y. Gao
,
B. C. Cao
,
Z. L. Yang
,
Q. Y. Yue
,
H. K. Shon
,
J.-H. Kim
Journal:
Chemical Engineering Journal - CHEM ENG J
, vol. 166, no. 2, pp. 544-550, 2011
Physical mechanisms of endurance degradation in TMO-RRAM
B. Chen
,
Y. Lu
,
B. Gao
,
Y. H. Fu
,
F. F. Zhang
,
P. Huang
,
Y. S. Chen
,
L. F. Liu
,
X. Y. Liu
,
J. F. Kang
,
Y. Y. Wang
,
Z. Fang
http://academic.research.microsoft.com/io.ashx?type=5&id=56990749&selfId1=55416900&selfId2=0&maxNumber=12&query=
Conference:
International Electron Devices Meeting - IEDM
, pp. 12.3.1-12.3.4, 2011
Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching
B. Gao
,
J. F. Kang
,
Y. S. Chen
,
F. F. Zhang
,
B. Chen
,
P. Huang
,
L. F. Liu
,
X. Y. Liu
,
Y. Y. Wang
,
X. A. Tran
,
Z. R. Wang
,
H. Y. Yu
http://academic.research.microsoft.com/io.ashx?type=5&id=56990783&selfId1=55416900&selfId2=0&maxNumber=12&query=
Conference:
International Electron Devices Meeting - IEDM
, pp. 17.4.1-17.4.4, 2011
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Citations
(66 times by 59 publications)
Ultralow Switching Energy Ni/$\hbox{GeO}_{x}$ /HfON/TaN RRAM
(
Citations: 1
)
C. H. Cheng
,
Albert Chin
,
F. S. Yeh
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 32, no. 3, pp. 366-368, 2011
Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM
(
Citations: 1
)
Daniele Ielmini
,
Federico Nardi
,
Carlo Cagli
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 10, pp. 3246-3253, 2011
Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$Based RRAM Devices
Christian Walczyk
,
Damian Walczyk
,
Thomas Schroeder
,
Thomas Bertaud
,
Malgorzata Sowinska
,
Mindaugas Lukosius
,
Mirko Fraschke
,
Dirk Wolansky
,
Bernd Tillack
,
Enrique Miranda
,
Christian Wenger
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 9, pp. 3124-3131, 2011
A study of the role of twist in migration and invasion of breast cancer cells
S. Li
,
S. E. Kendall
,
R. Raices
,
C. Tran
,
Z. Liu
,
M. Covarrubias
,
V. K. Leigh
,
S. D. Flanagan
Journal:
Bone
, vol. 48, no. 1, pp. S33-S34, 2011
Single-ZnO-Nanowire Memory
Yen-De Chiang
,
Wen-Yuan Chang
,
Ching-Yuan Ho
,
Cheng-Ying Chen
,
Chih-Hsiang Ho
,
Su-Jien Lin
,
Tai-Bor Wu
,
Jr-Hau He
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 58, no. 6, pp. 1735-1740, 2011
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