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Academic

Man Hoi Wong

Man Hoi Wong,University of California Santa Barbara,Electrical & Electronic Engineering,Nanotechnology

Man Hoi Wong

University of California Santa Barbara

Publications: 31 | Citations: 38

Fields: Electrical & Electronic Engineering, Nanotechnology

Collaborated with 61 co-authors from 1998 to 2012 | Cited by 71 authors

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Publications (31)

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Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 33, no. 5, pp. 658-660, 2012

CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 33, no. 1, pp. 41-43, 2012

Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510mS/mm $g_{m}$, and 0.66-$\Omega\cdot \hbox{mm}$ $R_{\rm on}$

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 33, no. 1, pp. 26-28, 2012

Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth (Citations: 1)

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 2, pp. 137-139, 2011

RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation (Citations: 1)

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 2, pp. 134-136, 2011

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Citations (38 times by 31 publications)

RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation (Citations: 1)

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 2, pp. 134-136, 2011

High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 5, pp. 626-628, 2011

Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization

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Journal: Nanoscale Research Letters - NANOSCALE RES LETT , vol. 6, no. 1, pp. 132-7, 2011

N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 5, pp. 635-637, 2011

Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs

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Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 58, no. 3, pp. 704-708, 2011

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