L. Goux

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L. Goux

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L. Goux

Interuniversity Microelectronics Center

Publications: 7 | Citations: 14 | G-Index: 3 | H-Index: 2

Interests: Applied Chemistry, Combinatorial Chemistry, Manufacturing Technology

Collaborated with 36 co-authors from 2001 to 2011; Cited by 41 authors

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Publications (7)

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Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories (Citations: 5)

F. Nardi, D. Ielmini, C. Cagli, S. Spiga, M. Fanciulli, L. Goux, D. J. Wouters

Journal: Solid-state Electronics - SOLID STATE ELECTRON , vol. 58, no. 1, pp. 42-47, 2011
A fast and reliable method used to investigate the size-dependent retention lifetime of a phase-change line cell

L. Goux, G. A. M. Hurkx, X. P. Wang, R. Delhougne, K. Attenborough, D. Gravesteijn, D. Wouters, J. Perez Gonzalez

Journal: Solid-state Electronics - SOLID STATE ELECTRON , vol. 58, no. 1, pp. 17-22, 2011
Influence of different deposition conditions of top and bottom electrode on the reliability of Sr 0.8Bi 2.2Ta 2O 9 ferroelectric capacitors (Citations: 1)

L. Goux, Z. Xu, V. Paraschiv, J. G. Lisoni, D. Maes, L. Haspeslagh, G. Groeseneken, D. J. Wouters

Journal: Solid-state Electronics - SOLID STATE ELECTRON , vol. 50, no. 7, pp. 1227-1233, 2006
MECHANICAL STABILITY OF Ir ELECTRODES USED FOR STACKED SrBi 2 Ta 2 O 9 FERROELECTRIC CAPACITORS

J. LISONI, J. JOHNSON, J. EVERAERT, L. GOUX, H. MEEREN, V. PARASCHIV, M. WILLEGEMS, D. MAES, L. HASPESLAGH, D. WOUTERS, C. CAPUTA, R. ZAMBRANO

Journal: Integrated Ferroelectrics - INTEGR FERROELECTRICS , vol. 81, no. 1, pp. 37-45, 2006
Integration of ferroelectric SrBi2Ta2O9-based capacitors in 0.35μm CMOS technology (Citations: 1)

J. G. Lisoni, J. A. Johnson, L. Goux, M. Schwitters, V. Paraschiv, D. Maes, L. Haspeslagh, C. Caputa, P. Casella, R. Zambrano, G. Vecchio, H. Monchoixhttp://academic.research.microsoft.com/io.ashx?type=5&id=19621504&selfId1=56789104&selfId2=0&maxNumber=12&query=

Journal: Physica Status Solidi (c) , vol. 1, no. S1, pp. S78-S82, 2004

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Citations (14 times by 13 publications)

Low-Power and Highly Reliable Multilevel Operation in $ \hbox{ZrO}_{2}$ 1T1R RRAM

Ming-Chi Wu, Yi-Wei Lin, Wen-Yueh Jang, Chen-Hsi Lin, Tseung-Yuen Tseng

Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 8, pp. 1026-1028, 2011
Nanowire-based RRAM crossbar memory with metallic core-oxide shell nanostructure

C. Cagli, F. Nardi, D. Ielmini, B. Harteneck, Z. Tan, Y. Zhang

Conference: Solid-State Device Research European Conference - ESSDERC , pp. 103-106, 2011
Reset Statistics of NiO-Based Resistive Switching Memories

Shibing Long, Carlo Cagli, Daniele Ielmini, Ming Liu, Jordi Sune

Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 11, pp. 1570-1572, 2011
Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices

Federico Nardi, Carlo Cagli, Sabina Spiga, Daniele Ielmini

Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 6, pp. 719-721, 2011
Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field and Temperature-Driven Filament Growth

Daniele Ielmini

Published in 2011.

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Co-authors (36)

Journals (5)

Keywords (20)

Publications (7)

BibTeX | RIS | RefWorks Download

Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories (Citations: 5)

A fast and reliable method used to investigate the size-dependent retention lifetime of a phase-change line cell

Influence of different deposition conditions of top and bottom electrode on the reliability of Sr 0.8Bi 2.2Ta 2O 9 ferroelectric capacitors (Citations: 1)

MECHANICAL STABILITY OF Ir ELECTRODES USED FOR STACKED SrBi 2 Ta 2 O 9 FERROELECTRIC CAPACITORS

Integration of ferroelectric SrBi2Ta2O9-based capacitors in 0.35μm CMOS technology (Citations: 1)

Citations (14 times by 13 publications)

Low-Power and Highly Reliable Multilevel Operation in $ \hbox{ZrO}_{2}$ 1T1R RRAM

Nanowire-based RRAM crossbar memory with metallic core-oxide shell nanostructure

Reset Statistics of NiO-Based Resistive Switching Memories

Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field and Temperature-Driven Filament Growth


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Publications (7) BibTeX | RIS | RefWorks Download

Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories (Citations: 5)

Influence of different deposition conditions of top and bottom electrode on the reliability of Sr 0.8Bi 2.2Ta 2O 9 ferroelectric capacitors (Citations: 1)

Integration of ferroelectric SrBi2Ta2O9-based capacitors in 0.35μm CMOS technology (Citations: 1)

Publications (7)

BibTeX | RIS | RefWorks Download