Co-authors (514)

Conferences (4)

Journals (66)

Keywords (456)

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Elvira M. C. Fortunato

Elvira M. C. Fortunato,Universidade Nova de Lisboa,Mechanical Engineering,Electrical & Electronic Engineering,Chemical Physics & Material Physics

Elvira M. C. Fortunato

Universidade Nova de Lisboa

Publications: 375 | Citations: 988

Fields: Mechanical Engineering, Electrical & Electronic Engineering, Chemical Physics & Material Physics

Collaborated with 514 co-authors from 1993 to 2012 | Cited by 2548 authors

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Publications (375)

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Amorphous Silicon Position Sensitive Detector Array for Fast 3-D Object Profiling

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Journal: IEEE Sensors Journal - IEEE SENS J , vol. 12, no. 4, pp. 812-820, 2012

The electronic transport mechanism in indium molybdenum oxide thin films RF sputtered at room temperature

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Journal: Europhysics Letters (epl) , vol. 97, no. 3, 2012

Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH3)3

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Journal: Science and Technology of Advanced Materials - SCI TECHNOL ADV MATER , vol. 13, no. 4, 2012

p-Type ${\hbox{Cu}}_{x}{\hbox{O}}$ Films Deposited at Room Temperature for Thin-Film Transistors

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Journal: IEEE/OSA Journal of Display Technology - J DISP TECHNOL , vol. 8, no. 1, pp. 41-47, 2012

E-MRS 2011 Fall Symposium I: Advances in Transparent Electronics, from Materials to Devices III

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Journal: Iop Conference Series: Materials Science and Engineering , vol. 34, no. 1, 2012

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Citations (988 times by 708 publications)

Empirical Modeling and Extraction of Parasitic Resistance in Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors (Citations: 2)

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Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 58, no. 8, pp. 2796-2799, 2011

Transport Physics and Device Modeling of Zinc Oxide Thin-Film Transistors Part I: Long-Channel Devices (Citations: 1)

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Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 58, no. 8, pp. 2610-2619, 2011

The Effect of Dynamic Bias Stress on the Photon-Enhanced Threshold Voltage Instability of Amorphous HfInZnO Thin-Film Transistors (Citations: 1)

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 2, pp. 164-166, 2011

Self-Assembled In-Plane Gate Oxide-Based Homojunction Thin-Film Transistors (Citations: 1)

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Journal: IEEE Electron Device Letters - IEEE ELECTRON DEV LETT , vol. 32, no. 4, pp. 500-502, 2011

NMR-based plant metabolomics: where do we stand, where do we go? (Citations: 3)

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Journal: Trends in Biotechnology - TRENDS BIOTECH , vol. 29, no. 6, pp. 267-275, 2011

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