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SOLID STATE ELECTRON - Solid-state Electronics
SOLID STATE ELECTRON - Solid-state Electronics
Publications: 12,259
|
Citation Count: 37,222 (Self-Citation: 2402)
|
H-Index: 51Year Range: 1960-2011
Interests:
Physics
Homepage
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Publications
(12259)
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories
(
Citations: 5
)
F. Nardi
,
D. Ielmini
,
C. Cagli
,
S. Spiga
,
M. Fanciulli
,
L. Goux
,
D. J. Wouters
Journal:
Solid-state Electronics - SOLID STATE ELECTRON
, vol. 58, no. 1, pp. 42-47, 2011
Physics of Gate Modulated Resonant Tunneling (RT)-FETs: Multi-barrier MOSFET for steep slope and high on-current
(
Citations: 3
)
Aryan Afzalian
,
Jean-Pierre Colinge
,
Denis Flandre
Journal:
Solid-state Electronics - SOLID STATE ELECTRON
, vol. 59, no. 1, pp. 50-61, 2011
2D analytical calculation of the electric field in lightly doped Schottky barrier double-gate MOSFETs and estimation of the tunneling/thermionic current
(
Citations: 2
)
Mike Schwarz
,
Thomas Holtij
,
Alexander Kloes
,
Benjamín Iñíguez
Journal:
Solid-state Electronics - SOLID STATE ELECTRON
, vol. 63, no. 1, pp. 119-129, 2011
Origin of low-frequency noise in pentacene field-effect transistors
(
Citations: 2
)
Yong Xu
,
Takeo Minari
,
Kazuhito Tsukagoshi
,
Jan Chroboczek
,
Francis Balestra
,
Gerard Ghibaudo
Journal:
Solid-state Electronics - SOLID STATE ELECTRON
, vol. 61, no. 1, pp. 106-110, 2011
3D NAND flash memory with laterally-recessed channel (LRC) and connection gate architecture
(
Citations: 2
)
Jang-Gn Yun
,
Jong Duk Lee
,
Byung-Gook Park
Journal:
Solid-state Electronics - SOLID STATE ELECTRON
, vol. 55, no. 1, pp. 37-43, 2011