Organic polymer thin-film transistor photosensors

Organic polymer thin-film transistor photosensors,10.1109/JSTQE.2004.833972,IEEE Journal of Selected Topics in Quantum Electronics,Michael C. Hamilton

Organic polymer thin-film transistor photosensors   (Citations: 7)
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We present our study of the effects of monochromatic illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs) and the use of these devices as photosensors. In the case of monochromatic illumination that is strongly absorbed by the polymer, the drain current of a device biased in the OFF-state is significantly increased and the threshold voltage is reduced. Light that is not strongly absorbed by the polymer has little effect on the electrical performance of the OP-TFTs. We explain these effects in terms of the photogeneration of excitons in the polymer channel region of the device. The density of excitons generated in the polymer depends on the energy of the incident photons, as well as on the irradiance level of the incident illumination. The photogenerated excitons subsequently dissociate into electrons and holes. The electrons can be trapped by positively charged states, thereby reducing the threshold voltage, while the photogenerated holes contribute to the excess photocurrent measured at the drain. To demonstrate the possible use of OP-TFTs as photosensors, we also present the responsivity, photosensitivity (signal-to-noise ratio), external quantum efficiency, noise-equivalent power, and specific detectivity of these devices. The dependence of these parameters on the incident photon energy and irradiance level is described.
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