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Physical degradation of GaN HEMT devices under high drain bias reliability testing

Physical degradation of GaN HEMT devices under high drain bias reliability testing,10.1016/j.microrel.2009.02.015,Microelectronics Reliability,S. Y. P

Physical degradation of GaN HEMT devices under high drain bias reliability testing   (Citations: 9)
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The AlGaN/GaN heterostructure HEMTs were epitaxially grown using MOCVD on semi-insulating SiC sub- strates. Standard III-V commercial production processing technology was used to fabricate the devices, which were then subjected to stress under accelerated DC life-tests with base-plate temperatures of 82, 112, and 142 C. Drain bias of 40 V and time-zero drain current of 250 mA/mm were applied. TEM samples were prepared via the lift-out technique using a focused ion beam (FIB). TEM analysis revealed that electrically degraded devices always contain a pit-like defect next to the drain in the top AlGaN layer. It has been found that the degree of the defect formation strongly correlates to drain current (IDmax) degradation.
Journal: Microelectronics Reliability , vol. 49, no. 5, pp. 478-483, 2009
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    • ...Additionally, the predominance of spontaneous over piezoelectric polarization in AlInN/GaN HEMTs [3] makes them less sensitive to potential reliability limitations involving stress-related mechanisms [9]–[11]...

    Stefano Tirelliet al. Fully Passivated AlInN/GaN HEMTs With $f_{\rm T}/f_{\rm MAX}$ of 205/2...

    • ...The basic quantitative understanding of the role and importance of spontaneous and piezoelectric polarizations in GaN HEMTs was established in the papers of Ambacher et al. [1]...
    • ...All other variables and parameters have their usual meanings, and we assume the values for the material constants are as given in [1]...
    • ...The specific comparison is for a heterostructure consisting of a GaN substrate and an epitaxial Al x Ga 1-x N overlayer, and we compare 1-D analytical results from [1] for the piezoelectric charge and the total polarization charge at the AlGaN/GaN interface with results obtained by solving the equations of Section IIB numerically...

    M. G. Anconaet al. Thermoelectromechanical simulation of GaN HEMTs

    • ...There is, however, growing evidence that the total strain (i.e., the lattice-mismatch and piezoelectric contributions) limits the reliability of conventional AlGaN/GaN HEMTs (for example, see [1] and [2])...

    Haifeng Sunet al. 205GHz (Al,In)N/GaN HEMTs

    • ...Degradation mechanisms have been attributed to hot-electron induced trap generation [1], converse piezoelectric effect [4], [5], or deep-trap-level generation [6]...
    • ...It has been suggested that degradation under the OFF-state stress is often related to mechanical damage due to the converse piezoelectric effect [5]...
    • ...Such generation of defects could serve as nucleation for crack formation reported for harsher stress conditions [5]...

    Richard J. T. Simmset al. Integrated Optical and Electrical Analysis: Identifying Location and P...

    • ...As mentioned by Park et al. [23] one drawback of TEM analysis is the extremely localized observation area and as a result it hardly representative of the overall features of the devices...
    • ...Nevertheless, similar defects have already been reported [23, 24]...

    N. Malbertet al. Reliability assessment in different HTO test conditions of AlGaN/GaN H...

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