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Memristive devices and systems

Memristive devices and systems,10.1109/PROC.1976.10092,Proceedings of The IEEE,L. O. Chua,Sung Mo Kang

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Memristive devices and systems   (Citations: 119)
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A broad generalization of memristors--a recently postulated circuit element--to an interesting class of nonlinear dynamical systems called memristive systems is introduced. These systems are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics. While possessing memory and exhibiting small-signal inductive or capacitive effects, they are incapable of energy discharge and they introduce no phase shift between the input and output waveforms. This zero-crossing property gives rise to a Lissajous figure which always passes through the origin. Memristive systems are hysteretic in the sense that their Lissajous figures vary with the excitation frequency. At very low frequencies, memristive systems are indistinguishable from nonlinear resistors while at extremely high frequencies, they reduce to linear resistors. These anomalous properties have misled and prevented the identification of many memristive devices and systems-including the thermistor, the Hodgkin-Huxley membrane circuit model, and the discharge tubes. Generic properties of memristive systems are derived and a canonic dynamical system model is presented along with an explicit algorithm for identifying the model parameters and functions.
Journal: Proceedings of The IEEE - PIEEE , vol. 64, no. 2, pp. 209-223, 1976
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    • ...Actually, the creative mind behind the theoretical foundations of memristors [9] has foreseen rather early the close affinity between memristors and biological neurons by indicating that the Hodgkin‐Huxley neuron model, which is a foundational model for biological neurons describing how action potentials in neurons are initiated and propagated, can be modeled using memristive equations [10]...

    Alfons Schuster, et al. From foundational issues in artificial intelligence to intelligent mem...

    • ...The design of the CAM cell is based on the fourth passive circuit element, the memristor (M) predicted by Chua in 1971 [5] and generalized by Kang [6], [7]...

    Kamran Eshraghian, et al. Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture f...

    • ...A more detailed model was presented in [1] which accounts for the nonlinearities observed in TiO2 conduction and switching behavior and is based on the later and more general memristive system framework of Chua and Kang [11]...

    Hisham Abdalla, et al. SPICE modeling of memristors

    • ...And such approaches span from use of new physical state variables other than charge or voltage [1][2][3], to novel devices and architectures which offer logic functions [4] as well as memory and programmable interconnect [5]...
    • ...NAND operation is executed in three sequential steps [3] as illustrated in Figs...
    • ...Unfortunately, “clear” and “implication” operations introduced in [3] are not efficient for duplication...

    Kyosun Kim, et al. Stateful logic pipeline architecture

    • ...The concept of memristor gained a broader scope in a series of works such as those of L. Chua and S. M. Kang [13]–[17]...

    Yenpo Ho, et al. Dynamical Properties and Design Analysis for Nonvolatile Memristor Mem...

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