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Noise modeling and characterization for 1.5-V 1.8GHz SOI low-noise amplifier

Noise modeling and characterization for 1.5-V 1.8GHz SOI low-noise amplifier,10.1109/16.915730,IEEE Transactions on Electron Devices,Wei Jin,Weidong L

Noise modeling and characterization for 1.5-V 1.8GHz SOI low-noise amplifier   (Citations: 6)
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SOI technology is a promising candidate for radio-frequency and microwave applications. In this work, SOI low-noise amplifiers (LNA) operating at 1.8-GHz under 1.5-V power supply are reported for the first time and the high-frequency noise characteristics are studied. A physical SOI thermal noise model is applied, and all the major noise sources associated with the transistors are modeled. SPICE simulation results of the circuit noise agree well with the measurement data. An LNA composed of floating-body SOI devices offers better performance than that with body-tied devices
Journal: IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES , vol. 48, no. 4, pp. 803-809, 2001
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