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RHEED and STM study of the two-dimensional growth of InAs on GaAs (111)A

RHEED and STM study of the two-dimensional growth of InAs on GaAs (111)A,10.1016/S0026-2692(96)00121-8,Microelectronics Journal,H. Yamaguchi,J. G. Bel

RHEED and STM study of the two-dimensional growth of InAs on GaAs (111)A  
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Reflection high-energy electron diffraction and scanning tunneling microscopy have been used to study the growth of InAs on GaAs (111)A by molecular beam epitaxy. In contrast to the 3-D growth mode observed for InAs on GaAs (001), there is no evidence for 3-D island formation on the (111)A surface. The precise control of the 2-D growth of InAs layers makes it possible to probe the early stages of strain relaxation by imaging misfit dislocations by STM. The band gap and position of the surface Fermi level of ultra-thin InAs films on GaAs (111)A have also been obtained by scanning tunneling spectroscopy as a function of InAs thickness. The band gap of InAs is established after about 10 MLs of InAs and an accumulation layer is formed at the surface after the growth of 20 MLs of InAs.
Journal: Microelectronics Journal , vol. 28, no. 8, pp. 825-831, 1997
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