Sign in
Author
|
Conference
|
Journal
|
Organization
|
Year
|
DOI
Look for results that meet for the following criteria:
since
equal to
before
between
and
Search in all fields of study
Limit my searches in the following fields of study
Agriculture Science
Arts & Humanities
Biology
Chemistry
Computer Science
Economics & Business
Engineering
Environmental Sciences
Geosciences
Material Science
Mathematics
Medicine
Physics
Social Science
Multidisciplinary
Keywords
(6)
Analytical Model
Leakage Current
Power Factor
Power Law
Stress Induced Leakage Current
Time Dependent
Subscribe
Academic
Publications
Hot hole stress induced leakage current (SILC) transient in tunnel oxides
Hot hole stress induced leakage current (SILC) transient in tunnel oxides,10.1109/55.728896,IEEE Electron Device Letters,Tahui Wang,Nian-Kai Zous,Jia-
Edit
Hot hole stress induced leakage current (SILC) transient in tunnel oxides
(
Citations: 10
)
BibTex
|
RIS
|
RefWorks
Download
Tahui Wang
,
Nian-Kai Zous
,
Jia-Long Lai
,
Chimoon Huang
The mechanisms and transient characteristics of hot hole
stress induced leakage current
(SILC) in tunnel oxides are investigated. Positive oxide charge assisted tunneling is found to be a dominant SILC mechanism in a hot hole stressed device. The SILC transient is attributed to oxide hole detrapping and thus annihilation of positive charge assisted tunneling centers. Our characterization shows that the
leakage current
transient in a 100-Å oxide obeys a
power law
time dependence f-n with the
power factor
n significantly less than one. An
analytical model
accounting for the observed time dependence is proposed
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 19, no. 11, pp. 411-413, 1998
DOI:
10.1109/55.728896
Cumulative
Annual
View Publication
The following links allow you to view full publications. These links are maintained by other sources not affiliated with Microsoft Academic Search.
(
ieeexplore.ieee.org
)
(
adsabs.harvard.edu
)
(
ieeexplore.ieee.org
)
(
ieeexplore.ieee.org
)
More »
Citation Context
(5)
...According to the Flash-SILC model, cycling-induced defects in the tunnel oxide form a trap-assisted tunneling percolation path via the oxide layer, manifested in CG [3,
4
]...
Meir Janai
,
et al.
Charge gain, NBTI recovery and random telegraph noise in localized-tra...
...According to the positive charge-assisted tunneling (PCAT) model [
16
], this injection current ( in Table II) will follow the law where is the elapsed time, and p is around 0.7...
Wen-Jer Tsai
,
et al.
Positive oxide charge-enhanced read disturb in a localized trapping st...
...An analytical model relating the time-dependence of to positive oxide charge tunnel detrapping was derived in our previous publication [
20
]...
Tahui Wang
,
et al.
Role of positive trapped charge in stress-induced leakage current for ...
...Several conduction mechanisms for SILC have been reported recently, such as sequential electron tunneling via trapped positive charge [7], [
8
], thermal-assisted electron tunneling via weak spot of interface [9], sequential electron tunneling via neutral electron traps [10]‐[14], and carrier charging and discharging of stress generated oxide traps [15], [16]...
Cherng-Ming Yih
,
et al.
Characterization of hot-hole injection induced SILC and related distur...
...We have derived the analytical model for Icat and Ih [
4
], where Ih has a timedependence t-l from the tunneling front model [3] and Icat Shows at-'' relationship in a certain range of oxide field...
Nian-Kai Zous
,
et al.
Edge FN stress induced leakage current in tunnel oxides
References
(13)
Stress-induced oxide leakage
(
Citations: 47
)
Reza Rofan
,
Chenming Hu
Journal:
IEEE Electron Device Letters - IEEE ELECTRON DEV LETT
, vol. 12, no. 11, pp. 632-634, 1991
High-field-induced degradation in ultra-thin SiO/sub 2/ films
(
Citations: 85
)
P. Olivo
,
T. N. Nguyen
,
B. Ricco
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 35, no. 12, pp. 2259-2267, 1988
A hot hole-induced low-level leakage current in thin silicon dioxide films
(
Citations: 16
)
Naohiro Matsukawa
,
Seiji Yamada
,
Kazumi Amemiya
,
Hiroaki Hazama
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 43, no. 11, pp. 1924-1929, 1996
Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides
(
Citations: 84
)
David J. Dumin
,
Jay R. Maddux
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 40, no. 5, pp. 986-993, 1993
Hot-electron and hole-emission effects in short n-channel MOSFET's
(
Citations: 106
)
K. R. Hofmann
,
C. Werner
,
W. Weber
,
G. Dorda
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 32, no. 3, pp. 691-699, 1985
Sort by:
Citations
(10)
Charge gain, NBTI recovery and random telegraph noise in localized-trapping NVM devices
Meir Janai
,
Ilan Bloom
,
Yael Shur
Published in 2011.
Deep-Trap Stress Induced Leakage Current Model for Nominal and Weak Oxides
(
Citations: 1
)
Shiro Kamohara
,
Chenming Hu
,
Tsugunori Okumura
Journal:
Japanese Journal of Applied Physics
, vol. 47, no. No. 8, pp. 6208-6213, 2008
A study of hot-hole injection during programming drain disturb in flash memories
(
Citations: 5
)
Daniele Ielmini
,
Andrea Ghetti
,
Alessandro S. Spinelli
,
Angelo Visconti
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 53, no. 4, pp. 668-676, 2006
Positive oxide charge-enhanced read disturb in a localized trapping storage flash memory cell
(
Citations: 6
)
Wen-Jer Tsai
,
Chih-Chieh Yeh
,
Nian-Kai Zous
,
Chen-Chin Liu
,
Shih-Keng Cho
,
Tahui Wang
,
Samuel C. Pan
,
Chih-Yuan Lu
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 51, no. 3, pp. 434-439, 2004
Role of positive trapped charge in stress-induced leakage current for flash EEPROM devices
(
Citations: 4
)
Tahui Wang
,
Nian-Kai Zous
,
Chih-Chieh Yeh
Journal:
IEEE Transactions on Electron Devices - IEEE TRANS ELECTRON DEVICES
, vol. 49, no. 11, pp. 1910-1916, 2002