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Reply to "Comparison of thermal-shunt and flip-chip HBT thermal impedances: comment on novel HBT with reduced thermal impedance"

Reply to "Comparison of thermal-shunt and flip-chip HBT thermal impedances: comment on novel HBT with reduced thermal impedance",10.1109/75.508559,IEE

Reply to "Comparison of thermal-shunt and flip-chip HBT thermal impedances: comment on novel HBT with reduced thermal impedance"  
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We would like to take this opportunity to respond to the above comment by Jenkins et al., who raised some good points that we would like to address concerning out letter. However, the primary point of their comment is to question whether flip-chip heterojunction bipolar transistors (HBT's) offer any advantage over the thermal-shunt technology developed by Bayraktaroglu et al. This question has been answered unambiguously in a recent report by Bayraktaroglu et al. that directly compared the thermal resistance of thermal-shunt and flip-chip devices. In this report, flip-chip devices on the average had 37% lower thermal resistance compared to conventional thermally shunted devices of similar size.
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