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Low-loss amorphous silicon-on-insulator technology for photonic integrated circuitry

Low-loss amorphous silicon-on-insulator technology for photonic integrated circuitry,10.1016/j.optcom.2009.01.021,Optics Communications,Shankar Kumar

Low-loss amorphous silicon-on-insulator technology for photonic integrated circuitry   (Citations: 11)
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We report the fabrication of low-loss amorphous silicon photonic wires deposited by plasma enhanced chemical vapor deposition. Single mode photonic wires were fabricated by 193nm optical lithography and dry etching. Propagation loss measurements show a loss of 3.46dB/cm for photonic wires (480×220nm) and 1.34dB/cm for ridge waveguides.
Journal: Optics Communications - OPT COMMUN , vol. 282, no. 9, pp. 1767-1770, 2009
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