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An electron-spin-resonance study of laser crystallized polycrystalline silicon

An electron-spin-resonance study of laser crystallized polycrystalline silicon,10.1016/j.jnoncrysol.2004.02.082,Journal of Non-crystalline Solids,K. B

An electron-spin-resonance study of laser crystallized polycrystalline silicon   (Citations: 1)
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Electron states in phosphorus doped laser crystallized polycrystalline silicon are investigated employing electron-spin-resonance measurements. The spectra reveal two resonances: a defect resonance assigned to silicon dangling bonds (g=2.0053) and the resonance due to conducting electrons (g=1.998). The temperature dependence of the susceptibility of the latter resonance can be described by a sum of a Curie- and a Pauli-like paramagnetism. As the Curie contribution decreases with increasing doping concentration the Pauli contribution increases. The defect density as a function of the doping concentration is constant for low doping concentrations and decreases for values larger than 1019 cm−3. The results are discussed in terms of models developed for single crystal, amorphous and microcrystalline silicon.
Journal: Journal of Non-crystalline Solids - J NON-CRYST SOLIDS , vol. 338, pp. 262-265, 2004
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