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Band Anticrossing in GaInNAs Alloys

Band Anticrossing in GaInNAs Alloys,10.1103/PhysRevLett.82.1221,Physical Review Letters,W. Shan,W. Walukiewicz,J. W. Ager III,E. E. Haller,J. F. Geisz

Band Anticrossing in GaInNAs Alloys   (Citations: 148)
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We present evidence for a strong interaction between the conduction band and a narrow resonant band formed by nitrogen states in Ga 1-xIn xN yAs 1-y alloys. The interaction leads to a splitting of the conduction band into two subbands and a reduction of the fundamental band gap. An anticrossing of the extended states of the conduction band of the Ga 1-xIn xAs matrix and the localized nitrogen resonant states is used to model the interaction. Optical transitions associated with the energy minima of the two subbands and the characteristic anticrossing behavior of the transitions under applied hydrostatic pressure have been unambiguously observed using photomodulation spectroscopy. The experimental results are in excellent quantitative agreement with the model.
Journal: Physical Review Letters - PHYS REV LETT , vol. 82, no. 6, pp. 1221-1224, 1999
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    • ...When a small fraction of As is replaced by N in GaAs the band gap (Eg) initially decreases rapidly, by approximately 150 meV per % As replaced by N [1], [2]...
    • ...The strong band gap bowing in GaNxAs1−x has previously been explained in terms of a band anticrossing (BAC) interaction between the GaAs conduction band edge (CBE) and a higher-lying band of N-related resonant defect states [1], [2]...
    • ...However, this has not been explicitly verified to date, with no evidence presented for instance of a BACrelated feature below the VBM in GaBixAs1−x, similar to that previously observed for GaNAs in photo-reflectance (PR) measurements [1]...

    C. A. Brodericket al. Tight binding analysis of the electronic structure of dilute bismide a...

    • ...This value agrees well with the bandgap calculated by the band anticrossing model [7]...

    Hagir Mohammed Khalilet al. Photocurrent oscillations in GaInNAs / GaAs multi-quantum well p-i-n s...

    • ...On the other hands, The binding energy of exciton was calculated to 5.5 – 7 meV using electron effective mass reported by W. Shan et al., F. Masia et al. and A. Polomeni et al. [10,11,12]...

    M. Inagakiet al. Origin of near-band-edge photoluminescence of GaAsN

    • ...Regarding single crystal semiconductors, the solar energy materials research group of the Lawrence Berkeley National Laboratory has showed the formation of an IB in different diluted semiconductors such as GaInNAs [6], ZnMnOTe [7] and GaNAsP [8]...

    D. Pastoret al. Pulsed Laser Melting Effects on Single Crystal Gallium Phosphide

    • ...These observations could be explained according to the band anticrossing model by assuming that N gives rise to the level EN localized in real space and degenerate with the states of the InxGa1–xAs con− duction band (CB) as expected for substitution of As with N atoms [4,12]...
    • ...As a result, the recombination energy of carriers confined in InGaAsN quantum well (QW) can be written as [4]...

    M. Gholamiet al. Evaluation of optical quality and properties of Ga 0.64 In 0.36 N 0.00...

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