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Use of Laser to Explain Heavy Ion Induced SEFIs in SDRAMs

Use of Laser to Explain Heavy Ion Induced SEFIs in SDRAMs,10.1109/TNS.2009.2037418,IEEE Transactions on Nuclear Science,A. Bougerol,F. Miller,N. Guibb

Use of Laser to Explain Heavy Ion Induced SEFIs in SDRAMs   (Citations: 2)
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In this work, using heavy ion and pulsed laser tests on a 110 nm 256 Mbit SDRAM, different SEFI types and other logic-related radiation effects are studied and explained. Effects seen using heavy ions were reproduced and localized on the die with the laser. Among the effects, Fuse-Latch Upsets were found to be responsible of typical addressing errors and were more particularly investigated. Moreover, an unusual logic-related effect, called SET in Voltage Buffer, was induced using heavy ions, and localized afterward with the laser. Soft SEFI and Hard SEFI were also investigated.
Journal: IEEE Transactions on Nuclear Science - IEEE TRANS NUCL SCI , vol. 57, no. 1, pp. 272-278, 2010
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    • ...In this section, we investigate the influence of test patterns on the SEFI detection rate during accelerator tests, in particular, for single-event fuse-latch upset (SEFLU), the most predominant type of them [15]...
    • ...On the other hand, SEFLUs appear, by far, more often during accelerator tests [15], so we focus our investigations on these particular events, at first by defining their behaviors, and then by studying their organizations...
    • ...In a recent study [15], we found that thanks to laser investigations, upsets in fuse-latch arrays are responsible for that effect...

    A. Bougerolet al. Experimental Demonstration of Pattern Influence on DRAM SEU and SEFI R...

    • ...However, soft error evaluations they suffer from cross-contamina modes, testability issues related to of functional modes, soft error repeatability [5, 21, 30-36]...

    Jonathan A. Pellishet al. Practicality of evaluating soft errors in commercial sub-90 nm CMOS fo...

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