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Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences

Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences,10.1109/TNS.201

Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences   (Citations: 1)
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The effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of BPW34FS silicon p-i-n diodes irradiated with 24 GeV/c protons up to 6.3 × 1015 neq/cm2 have been measured and analyzed. A parameterization predicting the radiation response in the fluence range relevant for the use of the diodes as radiation monitors in Super-LHC experiments is presented.
Journal: IEEE Transactions on Nuclear Science - IEEE TRANS NUCL SCI , vol. 57, no. 4, pp. 2066-2073, 2010
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    • ...In LHC experiments, the commercial OSRAM BPW34FS silicon p-i-n diode is used for monitoring high fluences [2]–[5], by injecting a constant forward readout current of 1 mA with a pulse duration of 700 ms and by measuring the variation of the forward voltage versus . With this readout protocol, the...
    • ...In addition, in order to expand the fluence measurement range to higher fluences, another method for monitoring the diode’s radiation response for Super-LHC fluences (up to few ) is presented in [2]...
    • ...In addition, both silicon detectors start to be sensitive at the same fluence than previously observed for the BPW34FS silicon p-i-n diode [2], [4], [5], which has a similar geometry ( thick diode; active area of ). For this reason, one can assume that the radiation response of these types of silicon detectors should be not totally different from the one observed for the BPW34FS diode...
    • ...At such high fluences one can consider that for these types of detectors the relaxation regime [20]–[27] is already established (as for the BPW34FS diode, see [2]), since the modification of the curve shape indicates that the device becomes ohmic-like...
    • ...However, the maximum measurement range observed for the thick detector is lower, since the forward voltage of the CNM-009-S01 silicon detector starts to saturate at an equivalent fluence of few indicating that the detector becomes ohmic-like (see [2], [20]–[27])...
    • ...Nevertheless, with the aim to characterize their radiation response in the ohmic-like regime with the approach presented in [2], a study on thick and thin silicon detector heavily irradiated (up to few ) is still in progress and will be addressed in a future paper...

    Julien Mekkiet al. Radiation Response of Forward Biased Float Zone and Magnetic Czochrals...

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