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(6)
Layered Structure
Near Infrared
Semiconductor Laser
Distributed Bragg Reflector
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5-W DBR Tapered Lasers Emitting at 1060 nm With a Narrow Spectral Linewidth and a Nearly Diffraction-Limited Beam Quality
5-W DBR Tapered Lasers Emitting at 1060 nm With a Narrow Spectral Linewidth and a Nearly Diffraction-Limited Beam Quality,10.1109/LPT.2008.2002744,IEE
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5-W DBR Tapered Lasers Emitting at 1060 nm With a Narrow Spectral Linewidth and a Nearly Diffraction-Limited Beam Quality
(
Citations: 7
)
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K.-H. Hasler
,
B. Sumpf
,
P. Adamiec
,
F. Bugge
,
J. Fricke
,
P. Ressel
,
H. Wenzel
,
G. Trankle
Distributed Bragg reflector
tapered lasers emitting at a wavelength of about 1060 nm were realized. The expitaxial layer structure leads to a vertical far-field angle of 15deg (full-width at half-maximum). The devices with a
total length
of 4 mm consist of 2-mm-long ridge waveguide and tapered sections. The input currents to both sections can be independently controlled. The laser reached 5-W output power with a narrow spectral linewidth below 40 pm (95% power) and a nearly diffraction-limited beam quality.
Journal:
IEEE Photonics Technology Letters - IEEE PHOTONIC TECHNOL LETT
, vol. 20, no. 19, pp. 1648-1650, 2008
DOI:
10.1109/LPT.2008.2002744
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Citation Context
(3)
...Recently, DBR tapered diode lasers have shown high output power and narrow line width operation and the simplicity and robustness makes this approach very attractive [
9
], [10]...
Ole Bjarlin Jensen
,
et al.
Widely Tunable High-Power Tapered Diode Laser at 1060 nm
...In this section, an example of the calibration of the laser model is presented for a device emitting at 1060 nm [
41
]...
...Here, we investigate a 1060-nm DBR tapered laser intended for generating 530 nm light by second harmonic generation (SHG) for laser displays [
41
]...
...Since the DBR section locks the emission wavelength, we have only simulated a single wavelength fixed at 1060 nm. The lasing wavelength was measured to be stable with RW current within 130 pm [
41
]...
...The DBR section is passive (unpumped), so it has been represented by a fixed reflectivity at the end of the RW. The reflectivity of the sixth-order DBR grating of DBR RW lasers was found to be around 31% [
41
]...
Jun Jun Lim
,
et al.
Design and Simulation of Next-Generation High-Power, High-Brightness L...
...We also reported earlier on DBRtapered diode lasers emitting 2.5 W at 976 nm [5] and 5 W at 1060 nm [
6
], which have a simpler manufacturing process and also combine all aforementioned requirements in one monolithic diode laser...
Christian Fiebig
,
et al.
High-Power DBR-Tapered Laser at 980 nm for Single-Path Second Harmonic...
References
(8)
Compact hybrid master oscillator power amplifier with 3.1-W CW output power at wavelengths around 1061 nm
(
Citations: 9
)
S. Schwertfeger
,
A. Klehr
,
G. Trankle
Journal:
IEEE Photonics Technology Letters - IEEE PHOTONIC TECHNOL LETT
, vol. 16, no. 5, pp. 1268-1270, 2004
Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers
(
Citations: 20
)
Peter Ressel
,
Ute Zeimer
,
Karl Häusler
,
Gert Beister
,
Bernd Sumpf
,
Andreas Klehr
,
Günther Tränkle
Journal:
IEEE Photonics Technology Letters - IEEE PHOTONIC TECHNOL LETT
, vol. 17, no. 5, pp. 962-964, 2005
980-nm DBR lasers using higher order gratings defined by i-line lithography
(
Citations: 8
)
J. Fricke
,
H. Wenzel
,
M. Matalla
,
A. Klehr
,
G. Erbert
Journal:
Semiconductor Science and Technology - SEMICOND SCI TECHNOL
, vol. 20, no. 11, pp. 1149-1152, 2005
Reliable high-power 1060 nm DBR lasers for second-harmonic generation
(
Citations: 6
)
H. K. Nguyen
,
S. Coleman
,
N. J. Visovsky
,
Y. Li
,
K. Song
,
R. W. Davis
,
M. H. Hu
,
C. Zah
Journal:
Electronics Letters - ELECTRON LETT
, vol. 43, no. 13, 2007
High-power distributed Bragg reflector lasers operating at 1065 nm
(
Citations: 4
)
M. Achtenhagen
,
N. V. Amarasinghe
,
G. A. Evans
Journal:
Electronics Letters - ELECTRON LETT
, vol. 43, no. 14, 2007
Sort by:
Citations
(7)
Widely Tunable High-Power Tapered Diode Laser at 1060 nm
Ole Bjarlin Jensen
,
Bernd Sumpf
,
Paul Michael Petersen
Journal:
IEEE Photonics Technology Letters - IEEE PHOTONIC TECHNOL LETT
, vol. 23, no. 21, pp. 1624-1626, 2011
Experimental and numerical study of Distributed-Bragg-Reflector tapered lasers
C. Fiebig
,
V. Z. Tronciu
,
M. Lichtner
,
K. Paschke
,
H. Wenzel
Journal:
Applied Physics B-lasers and Optics - APPL PHYS B-LASERS OPT
, vol. 99, no. 1, pp. 209-214, 2010
High-Brightness Quantum Well Tapered Lasers
(
Citations: 6
)
Bernd Sumpf
,
Karl-Heinz Hasler
,
Pawel Adamiec
,
Frank Bugge
,
Frank Dittmar
,
JÖrg Fricke
,
Hans Wenzel
,
Martin Zorn
,
GÖtz Erbert
,
GÜnther TrÄnkle
Journal:
IEEE Journal of Selected Topics in Quantum Electronics - IEEE J SEL TOP QUANTUM ELECTR
, vol. 15, no. 3, pp. 1009-1020, 2009
Design and Simulation of Next-Generation High-Power, High-Brightness Laser Diodes
(
Citations: 2
)
Jun Jun Lim
,
Slawomir Sujecki
,
Lei Lang
,
Zhichao Zhang
,
David Paboeuf
,
Gilles Pauliat
,
Gaelle Lucas-Leclin
,
Patrick Georges
,
Roderick C. I. MacKenzie
,
Philip Bream
,
Stephen Bull
,
Karl-Heinz Hasler
http://academic.research.microsoft.com/io.ashx?type=5&id=27093318&selfId1=0&selfId2=0&maxNumber=12&query=
Journal:
IEEE Journal of Selected Topics in Quantum Electronics - IEEE J SEL TOP QUANTUM ELECTR
, vol. 15, no. 3, pp. 993-1008, 2009
High-Power DBR-Tapered Laser at 980 nm for Single-Path Second Harmonic Generation
(
Citations: 2
)
Christian Fiebig
,
Gunnar Blume
,
Mirko Uebernickel
,
David Feise
,
Christian Kaspari
,
Katrin Paschke
,
Jorg Fricke
,
Hans Wenzel
,
Gotz Erbert
Journal:
IEEE Journal of Selected Topics in Quantum Electronics - IEEE J SEL TOP QUANTUM ELECTR
, vol. 15, no. 3, pp. 978-983, 2009