Cathodoluminescence of SiOx under-stoichiometric silica layers,10.1002/pssa.200521443,Physica Status Solidi (a),Roushdey Salh,A. von Czarnowski,M. V.

Cathodoluminescence of SiOx under-stoichiometric silica layers (Citations: 6)


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Under-stoichiometric thin silica layers SiOx with different stoichiometric degree 1 x 2, were prepared by thermal evaporation of silicon monoxide in vacuum and in ambient oxygen atmosphere of various pressure onto crystalline silicon substrates. The chemical composition has been determined by Fourier transform infrared spectroscopy (FTIR). A special formula is derived to correlate the stoichiometric degree x with the wavenumber of the main TO stretching mode (Si-O-Si) in silica, finally to determine the actual composition values x of the layers. Cathodoluminescence (CL) of these layers shows the development of typical amorphous SiO2 luminescence bands at the composition threshold x > 1.5 and then onwards to x = 2. These luminescence bands were observed at 4.3, 2.7, 2.15, and 1.9 eV. The green-yellow luminescence (2.15 eV) is strongly increasing with the annealing temperature up to 1300 °C and is assigned to phase separation of SiOx into Si and SiO2 and formation of hexamer silicon rings in the understoichiometric silica network. Finally we observe Si nanoclusters by means of transmission elec- tron microscopy (TEM) micrographs.

Journal: Physica Status Solidi (a) , vol. 203, no. 8, pp. 2049-2057, 2006

DOI: 10.1002/pssa.200521443

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Cathodoluminescence of SiOx under-stoichiometric silica layers,10.1002/pssa.200521443,Physica Status Solidi (a),Roushdey Salh,A. von Czarnowski,M. V.

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Silicon nanocluster aggregation in SiO2:Si layers (Citations: 1)

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Cathodoluminescence study of silicon oxide-silicon interface (Citations: 1)

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