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(4)
Coupling Constant
Effective Mass
Relaxation Time
Valence Band
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Analysis of Lattice and Ionized Impurity Scattering in p-Type Germanium
Analysis of Lattice and Ionized Impurity Scattering in p-Type Germanium,10.1103/PhysRev.127.1593,Physical Review,Dale Marius Brown,Ralph Bray
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Analysis of Lattice and Ionized Impurity Scattering in p-Type Germanium
(
Citations: 15
)
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Dale Marius Brown
,
Ralph Bray
The scattering of holes in p-type germanium by acoustical and optical phonons, and by ionized impurities has been studied over a wide range of temperature from 7 to 300°K, and for impurity concentrations from 1013 to 1017 cm-3. The mobility was analyzed on the basis of the following approximations: (1) The light- and heavy-hole valence bands are parabolic with spherical constant-energy surfaces and effective-mass ratios of 0.043 and 0.35; (2) the
relaxation time
for lattice scattering is the same for the heavy and light holes; and (3) the ionized impurity scattering is describable by the Brooks-Herring formula with the scattering limited to intraband transitions. The following results were obtained: (1) The expectation was substantiated that the lattice scattering at T<=70°K can be attributed to acoustical phonon interactions; the mobility muac=3.37×107 T-32 cm2/V-sec was obtained by treating it as the sole adjustable parameter in the range 10 to 70°K (2) the stronger T-2.3 dependence of mobility in the range 120 to 300°K can be attributed to the advent of optical mode scattering if the ratio of optical to acoustical mode coupling constants (EopEac)2 is chosen to be 3.8; (3) the Brooks-Herring formula describes the ionized impurity scattering very well from 30 to 300°K for impurity concentrations NI<=1015 cm-3, but overestimates the mobility for higher NI or lower T. The eventual failure of the analysis may be attributed to the neglect of carrier-carrier and interband ionized impurity scattering.
Journal:
Physical Review - PHYS REV X
, vol. 127, no. 5, pp. 1593-1602, 1962
DOI:
10.1103/PhysRev.127.1593
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Citation Context
(2)
...The expression for the hole mobility (μnon-op) in degenerate p-like bands scattered by the non-polar interaction with the optical phonons can be obtained from the study of Dale Marirus in Ge (
Brown and Bray, 1962
)...
Jian-xiao Si
,
et al.
Hole transport and phonon scattering in epitaxial PbSe films
...[13,
14
] The r value is estimated from the slop of the μ Η −T curve...
Shukang Deng
,
et al.
Synthesis and electrical transport properties of p-type Ba8Ga16CdxGe30...
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Citations
(15)
Thermoelectric Properties and Scattering Factors of Finely Grained Bi2Te3Related Materials Prepared by Mechanical Alloying
Kazuhiro Hasezaki
,
Takashi Hamachiyo
,
Maki Ashida
,
Takashi Ueda
,
Yasutoshi Noda
Journal:
Materials Transactions - MATER TRANS
, vol. 51, no. 5, pp. 863-867, 2010
Hole transport and phonon scattering in epitaxial PbSe films
Jian-xiao Si
,
Hui-zhen Wu
,
Tian-ning Xu
,
Chun-fang Cao
Journal:
Journal of Zhejiang University Science
, vol. 9, no. 1, pp. 137-142, 2008
Synthesis and electrical transport properties of p-type Ba8Ga16CdxGe30−x type-I clathrates
Shukang Deng
,
Xinfeng Tang
,
Han Li
,
Yonggao Yan
,
QingJie Zhang
Conference:
International Conference on Thermoelectrics - ICT
, pp. 230-233, 2007
Dislocation Dissociation and Electrical Properties of Plastically Deformed Germanium Single Crystals
(
Citations: 2
)
S. A. Shevchenko
,
I. I. Khodos
,
I. I. Snighireva
Journal:
Physica Status Solidi (a)
, vol. 91, no. 2, pp. 523-531, 1985
Relaxation dynamics and photoconductivity in p -type germanium
T. Grave
,
F. Keilmann
Journal:
European Physical Journal B - EUR PHYS J B
, vol. 32, no. 4, pp. 347-354, 1979