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Epitaxial Growth of SrTiO3 Films on Pt Electrodes and Their Electrical Properties

Epitaxial Growth of SrTiO3 Films on Pt Electrodes and Their Electrical Properties,10.1143/JJAP.31.2985,Japanese Journal of Applied Physics,Kazuhide Ab

Epitaxial Growth of SrTiO3 Films on Pt Electrodes and Their Electrical Properties   (Citations: 9)
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Heteroepitaxial SrTiO3 films of perovskite structure with thicknesses of 46 to 184 nm were prepared by rf magnetron sputtering, holding substrate temperature at 400°C, on Pt films which were also epitaxially grown on a MgO(100) substrate in advance. The relative dielectric constant was estimated to be more than 300, and the leakage current density was less than 10-8 A/cm2. The analysis of the leakage current suggests Schottky barrier formation at the interface between SrTiO3 and Pt films, with a barrier height of about 1 V.
Journal: Japanese Journal of Applied Physics , vol. 31, no. Part 1, No, pp. 2985-2988, 1992
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    • ...HEN SCALING down the device size of metal– insulator–metal (MIM) capacitors [1]–[12] used for analog, RF, and DRAM functions in ICs, it is necessary to continuously increase the capacitance density (ε0κ/tκ )[ 1]. To achieve this goal, the only choice is to increase the κ value of the dielectrics, which have evolved from Al2O3 ,H fO2 − Al2O3 [2]–[5], Nb2O5 [6], TiTaO (κ ∼ 45−50) [7]–[9] to SrTiO3 (STO; κ ∼ 50−200) [10]–[14]...

    K. C. Chianget al. Use of a High-Work-Function Ni Electrode to Improve the Stress Reliabi...

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